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High-performance p-channel transistors with transparent Zn doped-CuI

Author

Listed:
  • Ao Liu

    (Pohang University of Science and Technology)

  • Huihui Zhu

    (Pohang University of Science and Technology)

  • Won-Tae Park

    (University of Waterloo)

  • Se-Jun Kim

    (Korea Advanced Institute of Science and Technology)

  • Hyungjun Kim

    (Korea Advanced Institute of Science and Technology)

  • Myung-Gil Kim

    (Sungkyunkwan University)

  • Yong-Young Noh

    (Pohang University of Science and Technology)

Abstract

‘Ideal’ transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. In this study, we propose a doping approach through soft chemical solution process and transparent p-type Zn-doped CuI semiconductor for high-performance TFTs and circuits. The optimised TFTs annealed at 80 °C exhibit a high hole mobility of over 5 cm2 V−1 s−1 and high on/off current ratio of ~107 with good operational stability and reproducibility. The CuI:Zn semiconductors show intrinsic advantages for next-generation TFT applications and wider applications in optoelectronics and energy conversion/storage devices. This study paves the way for the realisation of transparent, flexible, and large-area integrated circuits combined with n-type metal-oxide semiconductor.

Suggested Citation

  • Ao Liu & Huihui Zhu & Won-Tae Park & Se-Jun Kim & Hyungjun Kim & Myung-Gil Kim & Yong-Young Noh, 2020. "High-performance p-channel transistors with transparent Zn doped-CuI," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-18006-6
    DOI: 10.1038/s41467-020-18006-6
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    Cited by:

    1. Ao Liu & Huihui Zhu & Taoyu Zou & Youjin Reo & Gi-Seong Ryu & Yong-Young Noh, 2022. "Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    2. Huihui Zhu & Ao Liu & Kyu In Shim & Haksoon Jung & Taoyu Zou & Youjin Reo & Hyunjun Kim & Jeong Woo Han & Yimu Chen & Hye Yong Chu & Jun Hyung Lim & Hyung-Jun Kim & Sai Bai & Yong-Young Noh, 2022. "High-performance hysteresis-free perovskite transistors through anion engineering," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    3. You Meng & Weijun Wang & Rong Fan & Zhengxun Lai & Wei Wang & Dengji Li & Xiaocui Li & Quan Quan & Pengshan Xie & Dong Chen & He Shao & Bowen Li & Zenghui Wu & Zhe Yang & SenPo Yip & Chun-Yuen Wong & , 2024. "An inorganic-blended p-type semiconductor with robust electrical and mechanical properties," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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