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Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics

Author

Listed:
  • Ao Liu

    (Pohang University of Science and Technology)

  • Huihui Zhu

    (Pohang University of Science and Technology)

  • Taoyu Zou

    (Pohang University of Science and Technology)

  • Youjin Reo

    (Pohang University of Science and Technology)

  • Gi-Seong Ryu

    (Pohang University of Science and Technology)

  • Yong-Young Noh

    (Pohang University of Science and Technology)

Abstract

The exploration of stable and high-mobility semiconductors that can be grown over a large area using cost-effective methods continues to attract the interest of the electronics community. However, many mainstream candidates are challenged by scarce and expensive components, manufacturing costs, low stability, and limitations of large-area growth. Herein, we report wafer-scale ultrathin (metal) chalcogenide semiconductors for high-performance complementary electronics using standard room temperature thermal evaporation. The n-type bismuth sulfide delivers an in-situ transition from a conductor to a high-mobility semiconductor after mild post-annealing with self-assembly phase conversion, achieving thin-film transistors with mobilities of over 10 cm2 V−1 s−1, on/off current ratios exceeding 108, and high stability. Complementary inverters are constructed in combination with p-channel tellurium device with hole mobilities of over 50 cm2 V−1 s−1, delivering remarkable voltage transfer characteristics with a high gain of 200. This work has laid the foundation for depositing scalable electronics in a simple and cost-effective manner, which is compatible with monolithic integration with commercial products such as organic light-emitting diodes.

Suggested Citation

  • Ao Liu & Huihui Zhu & Taoyu Zou & Youjin Reo & Gi-Seong Ryu & Yong-Young Noh, 2022. "Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-34119-6
    DOI: 10.1038/s41467-022-34119-6
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    References listed on IDEAS

    as
    1. Ao Liu & Huihui Zhu & Won-Tae Park & Se-Jun Kim & Hyungjun Kim & Myung-Gil Kim & Yong-Young Noh, 2020. "High-performance p-channel transistors with transparent Zn doped-CuI," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    2. Zhaoyang Lin & Yuan Liu & Udayabagya Halim & Mengning Ding & Yuanyue Liu & Yiliu Wang & Chuancheng Jia & Peng Chen & Xidong Duan & Chen Wang & Frank Song & Mufan Li & Chengzhang Wan & Yu Huang & Xiang, 2018. "Solution-processable 2D semiconductors for high-performance large-area electronics," Nature, Nature, vol. 562(7726), pages 254-258, October.
    3. Soo Ho Choi & Seok Joon Yun & Yo Seob Won & Chang Seok Oh & Soo Min Kim & Ki Kang Kim & Young Hee Lee, 2022. "Large-scale synthesis of graphene and other 2D materials towards industrialization," Nature Communications, Nature, vol. 13(1), pages 1-5, December.
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