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Specific energy consumption of dynamic random access memory module supply chain in Taiwan

Author

Listed:
  • Chang, Cheng-Kuang
  • Hu, Shih-Cheng
  • Liu, Vincent
  • Chan, David Yi-Liang
  • Huang, Chin-Yi
  • Weng, Ling-Chia

Abstract

This study focuses on specific energy consumption (SEC) of all major energy consuming segments of the Dynamic Random Access Memory (DRAM) module supply chain, including 12” Si-wafer (ingot), wafer fabrication, integrated circuit (IC) assembly, IC testing, module assembly, and printed circuit board (PCB). Results show that energy consumption of a single unit of the end product from the DRAM supply chain is 4.67 kWh/PIC (PIC = a piece of DRAM module). For its annual shipments of 85,136,366 PIC/yr, the whole DRAM supply chain consumes a total of 397,331,726 kWh of energy, emitting 252,703 tons of CO2. The outcomes of this study provide baseline SEC of the DRAM supply chain that can be used while designing fabrication plants (hereafter referred to as “fabs”) in the future. We estimate that if all fabs in Taiwan achieve the same level of SEC as the best performer (i.e. lowest SEC level), annual energy savings and emissions reduction in Taiwan could be expected to reach 228,561,645 kWh of electricity and 149,426 tons of CO2 emissions, respectively.

Suggested Citation

  • Chang, Cheng-Kuang & Hu, Shih-Cheng & Liu, Vincent & Chan, David Yi-Liang & Huang, Chin-Yi & Weng, Ling-Chia, 2012. "Specific energy consumption of dynamic random access memory module supply chain in Taiwan," Energy, Elsevier, vol. 41(1), pages 508-513.
    • Handle: RePEc:eee:energy:v:41:y:2012:i:1:p:508-513
    DOI: 10.1016/j.energy.2012.02.036
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    References listed on IDEAS

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    1. Hu, S.-C. & Chuah, Y.K., 2003. "Power consumption of semiconductor fabs in Taiwan," Energy, Elsevier, vol. 28(8), pages 895-907.
    2. Hu, Shih-Cheng & Xu, Tengfang & Chaung, Tony & Chan, David Y.-L., 2010. "Characterization of energy use in 300 mm DRAM (Dynamic Random Access Memory) wafer fabrication plants (fabs) in Taiwan," Energy, Elsevier, vol. 35(9), pages 3788-3792.
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    Cited by:

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