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Metal chalcogenide electron extraction layers for nip-type tin-based perovskite solar cells

Author

Listed:
  • Tianpeng Li

    (Fudan University)

  • Bin Li

    (Donghua University)

  • Yingguo Yang

    (Fudan University
    Chinese Academy of Sciences)

  • Zuoming Jin

    (Fudan University)

  • Zhiguo Zhang

    (Fudan University)

  • Peilin Wang

    (Fudan University)

  • Liangliang Deng

    (Fudan University)

  • Yiqiang Zhan

    (Fudan University)

  • Qinghong Zhang

    (Donghua University)

  • Jia Liang

    (Fudan University)

Abstract

Tin-based perovskite solar cells have garnered attention for their biocompatibility, narrow bandgap, and long thermal carrier lifetime. However, nip-type tin-based perovskite solar cells have underperformed largely due to the indiscriminate use of metal oxide electron transport layers originally designed for nip-type lead-based perovskite solar cells. Here, we reveal that this underperformance is caused by oxygen vacancies and deeper energy levels in metal oxide. To address these issues, we propose a metal chalcogenide electron transport layer, specifically Sn(S0.92Se0.08)2, which circumvents the oxygen molecules desorption and impedes the Sn2+ oxidation. As a result, tin-based perovskite solar cells with Sn(S0.92Se0.08)2 demonstrate a VOC increase from 0.48 – 0.73 V and a power conversion efficiency boost from 6.98 – 11.78%. Additionally, these cells exhibit improved stability, retaining over 95% of their initial efficiency after 1632 h. Our findings showcase metal chalcogenides as promising candidates for future nip-type tin-based perovskite solar cell applications.

Suggested Citation

  • Tianpeng Li & Bin Li & Yingguo Yang & Zuoming Jin & Zhiguo Zhang & Peilin Wang & Liangliang Deng & Yiqiang Zhan & Qinghong Zhang & Jia Liang, 2024. "Metal chalcogenide electron extraction layers for nip-type tin-based perovskite solar cells," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-53713-4
    DOI: 10.1038/s41467-024-53713-4
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