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Tailoring amorphous boron nitride for high-performance two-dimensional electronics

Author

Listed:
  • Cindy Y. Chen

    (The Pennsylvania State University)

  • Zheng Sun

    (Purdue University)

  • Riccardo Torsi

    (The Pennsylvania State University)

  • Ke Wang

    (The Pennsylvania State University)

  • Jessica Kachian

    (Intel Corporation)

  • Bangzhi Liu

    (The Pennsylvania State University)

  • Gilbert B. Rayner

    (The Kurt J. Lesker Company)

  • Zhihong Chen

    (Purdue University)

  • Joerg Appenzeller

    (Purdue University)

  • Yu-Chuan Lin

    (National Yang Ming Chiao Tung University)

  • Joshua A. Robinson

    (The Pennsylvania State University
    The Pennsylvania State University
    The Pennsylvania State University)

Abstract

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (

Suggested Citation

  • Cindy Y. Chen & Zheng Sun & Riccardo Torsi & Ke Wang & Jessica Kachian & Bangzhi Liu & Gilbert B. Rayner & Zhihong Chen & Joerg Appenzeller & Yu-Chuan Lin & Joshua A. Robinson, 2024. "Tailoring amorphous boron nitride for high-performance two-dimensional electronics," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48429-4
    DOI: 10.1038/s41467-024-48429-4
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    References listed on IDEAS

    as
    1. Seokmo Hong & Chang-Seok Lee & Min-Hyun Lee & Yeongdong Lee & Kyung Yeol Ma & Gwangwoo Kim & Seong In Yoon & Kyuwook Ihm & Ki-Jeong Kim & Tae Joo Shin & Sang Won Kim & Eun-chae Jeon & Hansol Jeon & Ju, 2020. "Ultralow-dielectric-constant amorphous boron nitride," Nature, Nature, vol. 582(7813), pages 511-514, June.
    2. Deji Akinwande & Cedric Huyghebaert & Ching-Hua Wang & Martha I. Serna & Stijn Goossens & Lain-Jong Li & H.-S. Philip Wong & Frank H. L. Koppens, 2019. "Graphene and two-dimensional materials for silicon technology," Nature, Nature, vol. 573(7775), pages 507-518, September.
    3. Max C. Lemme & Deji Akinwande & Cedric Huyghebaert & Christoph Stampfer, 2022. "2D materials for future heterogeneous electronics," Nature Communications, Nature, vol. 13(1), pages 1-5, December.
    Full references (including those not matched with items on IDEAS)

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