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Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications

Author

Listed:
  • Xinyu Huang

    (Huazhong University of Science and Technology
    Hubei Yangtze Memory Laboratories)

  • Luman Zhang

    (Huazhong University of Science and Technology)

  • Lei Tong

    (Huazhong University of Science and Technology)

  • Zheng Li

    (Huazhong University of Science and Technology)

  • Zhuiri Peng

    (Huazhong University of Science and Technology)

  • Runfeng Lin

    (Huazhong University of Science and Technology)

  • Wenhao Shi

    (Huazhong University of Science and Technology)

  • Kan-Hao Xue

    (Huazhong University of Science and Technology)

  • Hongwei Dai

    (Huazhong University of Science and Technology)

  • Hui Cheng

    (Huazhong University of Science and Technology)

  • Danilo de Camargo Branco

    (Purdue University)

  • Jianbin Xu

    (The Chinese University of Hong Kong)

  • Junbo Han

    (Huazhong University of Science and Technology)

  • Gary J. Cheng

    (Purdue University)

  • Xiangshui Miao

    (Huazhong University of Science and Technology
    Hubei Yangtze Memory Laboratories)

  • Lei Ye

    (Huazhong University of Science and Technology
    Hubei Yangtze Memory Laboratories
    Shanghai Institute of Technical Physics Chinese Academy of Sciences)

Abstract

The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature, as well as the lack of modulation methods, seriously limit the application of EB in van der Waals (vdW) spintronic devices. Here, we utilized pressure engineering to tune the vdW spacing of the two-dimensional (2D) FePSe3/Fe3GeTe2 heterostructures. The EB field (HEB, from 29.2 mT to 111.2 mT) and blocking temperature (Tb, from 20 K to 110 K) are significantly enhanced, and a highly sensitive and robust spin valve is demonstrated. Interestingly, this enhancement of the EB effect was extended to exposed Fe3GeTe2, due to the single-domain nature of Fe3GeTe2. Our findings provide opportunities for the producing, exploring, and tuning of magnetic vdW heterostructures with strong interlayer coupling, thereby enabling customized 2D spintronic devices in the future.

Suggested Citation

  • Xinyu Huang & Luman Zhang & Lei Tong & Zheng Li & Zhuiri Peng & Runfeng Lin & Wenhao Shi & Kan-Hao Xue & Hongwei Dai & Hui Cheng & Danilo de Camargo Branco & Jianbin Xu & Junbo Han & Gary J. Cheng & X, 2023. "Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-37918-7
    DOI: 10.1038/s41467-023-37918-7
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    1. Su Kong Chong & Yang Cheng & Huiyuan Man & Seng Huat Lee & Yu Wang & Bingqian Dai & Masaki Tanabe & Ting-Hsun Yang & Zhiqiang Mao & Kathryn A. Moler & Kang L. Wang, 2024. "Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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