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Universal scaling law for chiral antiferromagnetism

Author

Listed:
  • Shijie Xu

    (Beihang University
    University of California
    Tongji University
    Beihang University)

  • Bingqian Dai

    (University of California)

  • Yuhao Jiang

    (Beihang University
    Tongji University)

  • Danrong Xiong

    (Beihang University
    Beihang University)

  • Houyi Cheng

    (Beihang University
    Beihang University
    Beihang University)

  • Lixuan Tai

    (University of California)

  • Meng Tang

    (Tongji University)

  • Yadong Sun

    (Tongji University)

  • Yu He

    (Beihang University
    Beihang University)

  • Baolin Yang

    (Lanzhou University)

  • Yong Peng

    (Lanzhou University)

  • Kang L. Wang

    (University of California)

  • Weisheng Zhao

    (Beihang University
    Beihang University
    Beihang University)

Abstract

The chiral antiferromagnetic (AFM) materials, which have been widely investigated due to their rich physics, such as non-zero Berry phase and topology, provide a platform for the development of antiferromagnetic spintronics. Here, we find two distinctive anomalous Hall effect (AHE) contributions in the chiral AFM Mn3Pt, originating from a time-reversal symmetry breaking induced intrinsic mechanism and a skew scattering induced topological AHE due to an out-of-plane spin canting with respect to the Kagome plane. We propose a universal AHE scaling law to explain the AHE resistivity ( $${{\rho }}_{AH}$$ ρ A H ) in this chiral magnet, with both a scalar spin chirality (SSC)-induced skew scattering topological AHE term, $${a}_{sk}$$ a s k and non-collinear spin-texture induced intrinsic anomalous Hall term, $${{b}}_{{in}}$$ b i n . We found that $${{{a}}}_{{{sk}}}$$ a s k and $${{{b}}}_{{{in}}}$$ b i n can be effectively modulated by the interfacial electron scattering, exhibiting a linear relation with the inverse film thickness. Moreover, the scaling law can explain the anomalous Hall effect in various chiral magnets and has far-reaching implications for chiral-based spintronics devices.

Suggested Citation

  • Shijie Xu & Bingqian Dai & Yuhao Jiang & Danrong Xiong & Houyi Cheng & Lixuan Tai & Meng Tang & Yadong Sun & Yu He & Baolin Yang & Yong Peng & Kang L. Wang & Weisheng Zhao, 2024. "Universal scaling law for chiral antiferromagnetism," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46325-5
    DOI: 10.1038/s41467-024-46325-5
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