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An antiferromagnetic spin phase change memory

Author

Listed:
  • Han Yan

    (Beihang University)

  • Hongye Mao

    (Beihang University)

  • Peixin Qin

    (Beihang University)

  • Jinhua Wang

    (Huazhong University of Science and Technology)

  • Haidong Liang

    (National University of Singapore)

  • Xiaorong Zhou

    (Beihang University)

  • Xiaoning Wang

    (Beihang University)

  • Hongyu Chen

    (Beihang University)

  • Ziang Meng

    (Beihang University)

  • Li Liu

    (Beihang University)

  • Guojian Zhao

    (Beihang University)

  • Zhiyuan Duan

    (Beihang University)

  • Zengwei Zhu

    (Huazhong University of Science and Technology)

  • Bin Fang

    (Chinese Academy of Sciences)

  • Zhongming Zeng

    (Chinese Academy of Sciences)

  • Andrew A. Bettiol

    (National University of Singapore)

  • Qinghua Zhang

    (Chinese Academy of Sciences)

  • Peizhe Tang

    (Beihang University
    Center for Free Electron Laser Science)

  • Chengbao Jiang

    (Beihang University)

  • Zhiqi Liu

    (Beihang University)

Abstract

The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T.

Suggested Citation

  • Han Yan & Hongye Mao & Peixin Qin & Jinhua Wang & Haidong Liang & Xiaorong Zhou & Xiaoning Wang & Hongyu Chen & Ziang Meng & Li Liu & Guojian Zhao & Zhiyuan Duan & Zengwei Zhu & Bin Fang & Zhongming Z, 2024. "An antiferromagnetic spin phase change memory," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-49451-2
    DOI: 10.1038/s41467-024-49451-2
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    References listed on IDEAS

    as
    1. Satoru Nakatsuji & Naoki Kiyohara & Tomoya Higo, 2015. "Large anomalous Hall effect in a non-collinear antiferromagnet at room temperature," Nature, Nature, vol. 527(7577), pages 212-215, November.
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