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Nanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution

Author

Listed:
  • Fan Zhang

    (Tsinghua University
    Beijing University of Posts and Telecommunications)

  • Yang Zhang

    (Tsinghua University)

  • Linglong Li

    (Tsinghua University)

  • Xing Mou

    (Tsinghua University)

  • Huining Peng

    (Tsinghua University)

  • Shengchun Shen

    (Tsinghua University)

  • Meng Wang

    (RIKEN Center for Emergent Matter Science (CEMS))

  • Kunhong Xiao

    (Tsinghua University)

  • Shuai-Hua Ji

    (Tsinghua University
    Frontier Science Center for Quantum Information)

  • Di Yi

    (Tsinghua University)

  • Tianxiang Nan

    (Tsinghua University
    Tsinghua University)

  • Jianshi Tang

    (Tsinghua University
    Tsinghua University)

  • Pu Yu

    (Tsinghua University
    Frontier Science Center for Quantum Information)

Abstract

Multistate resistive switching device emerges as a promising electronic unit for energy-efficient neuromorphic computing. Electric-field induced topotactic phase transition with ionic evolution represents an important pathway for this purpose, which, however, faces significant challenges in device scaling. This work demonstrates a convenient scanning-probe-induced proton evolution within WO3, driving a reversible insulator-to-metal transition (IMT) at nanoscale. Specifically, the Pt-coated scanning probe serves as an efficient hydrogen catalysis probe, leading to a hydrogen spillover across the nano junction between the probe and sample surface. A positively biased voltage drives protons into the sample, while a negative voltage extracts protons out, giving rise to a reversible manipulation on hydrogenation-induced electron doping, accompanied by a dramatic resistive switching. The precise control of the scanning probe offers the opportunity to manipulate the local conductivity at nanoscale, which is further visualized through a printed portrait encoded by local conductivity. Notably, multistate resistive switching is successfully demonstrated via successive set and reset processes. Our work highlights the probe-induced hydrogen evolution as a new direction to engineer memristor at nanoscale.

Suggested Citation

  • Fan Zhang & Yang Zhang & Linglong Li & Xing Mou & Huining Peng & Shengchun Shen & Meng Wang & Kunhong Xiao & Shuai-Hua Ji & Di Yi & Tianxiang Nan & Jianshi Tang & Pu Yu, 2023. "Nanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-39687-9
    DOI: 10.1038/s41467-023-39687-9
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