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Free-standing two-dimensional ferro-ionic memristor

Author

Listed:
  • Jinhyoung Lee

    (Sungkyunkwan University (SKKU)
    Institute for Basic Science (IBS))

  • Gunhoo Woo

    (Sungkyunkwan University
    Sungkyunkwan University)

  • Jinill Cho

    (Sungkyunkwan University (SKKU))

  • Sihoon Son

    (Sungkyunkwan University
    Sungkyunkwan University)

  • Hyelim Shin

    (Sungkyunkwan University)

  • Hyunho Seok

    (Sungkyunkwan University
    Sungkyunkwan University)

  • Min-Jae Kim

    (Sungkyunkwan University
    Sungkyunkwan University)

  • Eungchul Kim

    (Samsung Electronics)

  • Ziyang Wang

    (Sungkyunkwan University (SKKU))

  • Boseok Kang

    (Sungkyunkwan University
    Sungkyunkwan University
    Sungkyunkwan University)

  • Won-Jun Jang

    (Institute for Basic Science (IBS)
    Ewha Womans University)

  • Taesung Kim

    (Sungkyunkwan University (SKKU)
    Sungkyunkwan University
    Sungkyunkwan University
    Sungkyunkwan University)

Abstract

Two-dimensional (2D) ferroelectric materials have emerged as significant platforms for multi-functional three-dimensional (3D) integrated electronic devices. Among 2D ferroelectric materials, ferro-ionic CuInP2S6 has the potential to achieve the versatile advances in neuromorphic computing systems due to its phase tunability and ferro-ionic characteristics. As CuInP2S6 exhibits a ferroelectric phase with insulating properties at room temperature, the external temperature and electrical field should be required to activate the ferro-ionic conduction. Nevertheless, such external conditions inevitably facilitate stochastic ionic conduction, which completely limits the practical applications of 2D ferro-ionic materials. Herein, free-standing 2D ferroelectric heterostructure is mechanically manipulated for nano-confined conductive filaments growth in free-standing 2D ferro-ionic memristor. The ultra-high mechanical bending is selectively facilitated at the free-standing area to spatially activate the ferro-ionic conduction, which allows the deterministic local positioning of Cu+ ion transport. According to the local flexoelectric engineering, 5.76×102-fold increased maximum current is observed within vertical shear strain 720 nN, which is theoretically supported by the 3D flexoelectric simulation. In conclusion, we envision that our universal free-standing platform can provide the extendable geometric solution for ultra-efficient self-powered system and reliable neuromorphic device.

Suggested Citation

  • Jinhyoung Lee & Gunhoo Woo & Jinill Cho & Sihoon Son & Hyelim Shin & Hyunho Seok & Min-Jae Kim & Eungchul Kim & Ziyang Wang & Boseok Kang & Won-Jun Jang & Taesung Kim, 2024. "Free-standing two-dimensional ferro-ionic memristor," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48810-3
    DOI: 10.1038/s41467-024-48810-3
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