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An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

Author

Listed:
  • Feng Zhou

    (Nanjing University)

  • Hehe Gong

    (Nanjing University)

  • Ming Xiao

    (Virginia Polytechnic Institute and State University)

  • Yunwei Ma

    (Virginia Polytechnic Institute and State University)

  • Zhengpeng Wang

    (Nanjing University)

  • Xinxin Yu

    (Nanjing University)

  • Li Li

    (The Australian National University
    The Australian National University)

  • Lan Fu

    (The Australian National University)

  • Hark Hoe Tan

    (The Australian National University
    The Australian National University)

  • Yi Yang

    (Nanjing University)

  • Fang-Fang Ren

    (Nanjing University)

  • Shulin Gu

    (Nanjing University)

  • Youdou Zheng

    (Nanjing University)

  • Hai Lu

    (Nanjing University)

  • Rong Zhang

    (Nanjing University)

  • Yuhao Zhang

    (Virginia Polytechnic Institute and State University)

  • Jiandong Ye

    (Nanjing University)

Abstract

Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices. Here we report avalanche and surge robustness in a heterojunction formed between the ultra-wide bandgap n-type gallium oxide and the wide-bandgap p-type nickel oxide. Under 1500 V reverse bias, impact ionization initiates in gallium oxide, and the staggered band alignment favors efficient hole removal, enabling a high avalanche current over 50 A. Under forward bias, bipolar conductivity modulation enables the junction to survive over 50 A surge current. Moreover, the asymmetric carrier lifetime makes the high-level carrier injection dominant in nickel oxide, enabling a fast reverse recovery within 15 ns. This heterojunction breaks the fundamental trade-off between robustness and switching speed in conventional homojunctions and removes a key hurdle to advance ultra-wide bandgap semiconductor devices for power industrial applications.

Suggested Citation

  • Feng Zhou & Hehe Gong & Ming Xiao & Yunwei Ma & Zhengpeng Wang & Xinxin Yu & Li Li & Lan Fu & Hark Hoe Tan & Yi Yang & Fang-Fang Ren & Shulin Gu & Youdou Zheng & Hai Lu & Rong Zhang & Yuhao Zhang & Ji, 2023. "An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-40194-0
    DOI: 10.1038/s41467-023-40194-0
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    References listed on IDEAS

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    1. Jincheng Zhang & Pengfei Dong & Kui Dang & Yanni Zhang & Qinglong Yan & Hu Xiang & Jie Su & Zhihong Liu & Mengwei Si & Jiacheng Gao & Moufu Kong & Hong Zhou & Yue Hao, 2022. "Ultra-wide bandgap semiconductor Ga2O3 power diodes," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    2. Qingyi Zhang & Ning Li & Tao Zhang & Dianmeng Dong & Yongtao Yang & Yuehui Wang & Zhengang Dong & Jiaying Shen & Tianhong Zhou & Yuanlin Liang & Weihua Tang & Zhenping Wu & Yang Zhang & Jianhua Hao, 2023. "Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
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