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Non-volatile electrically programmable integrated photonics with a 5-bit operation

Author

Listed:
  • Rui Chen

    (University of Washington)

  • Zhuoran Fang

    (University of Washington)

  • Christopher Perez

    (Stanford University)

  • Forrest Miller

    (University of Washington)

  • Khushboo Kumari

    (University of Washington)

  • Abhi Saxena

    (University of Washington)

  • Jiajiu Zheng

    (University of Washington)

  • Sarah J. Geiger

    (The Charles Stark Draper Laboratory)

  • Kenneth E. Goodson

    (Stanford University)

  • Arka Majumdar

    (University of Washington
    University of Washington)

Abstract

Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb2S3)-clad silicon photonic platform simultaneously achieving low loss ( 10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb2S3-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of $$\sim 10\,{fJ}/n{m}^{3}$$ ~ 10 f J / n m 3 . Remarkably, Sb2S3 is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer.

Suggested Citation

  • Rui Chen & Zhuoran Fang & Christopher Perez & Forrest Miller & Khushboo Kumari & Abhi Saxena & Jiajiu Zheng & Sarah J. Geiger & Kenneth E. Goodson & Arka Majumdar, 2023. "Non-volatile electrically programmable integrated photonics with a 5-bit operation," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-39180-3
    DOI: 10.1038/s41467-023-39180-3
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    References listed on IDEAS

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    1. Yifei Zhang & Jeffrey B. Chou & Junying Li & Huashan Li & Qingyang Du & Anupama Yadav & Si Zhou & Mikhail Y. Shalaginov & Zhuoran Fang & Huikai Zhong & Christopher Roberts & Paul Robinson & Bridget Bo, 2019. "Broadband transparent optical phase change materials for high-performance nonvolatile photonics," Nature Communications, Nature, vol. 10(1), pages 1-9, December.
    2. Changming Wu & Heshan Yu & Seokhyeong Lee & Ruoming Peng & Ichiro Takeuchi & Mo Li, 2021. "Programmable phase-change metasurfaces on waveguides for multimode photonic convolutional neural network," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
    3. Cheng Wang & Mian Zhang & Xi Chen & Maxime Bertrand & Amirhassan Shams-Ansari & Sethumadhavan Chandrasekhar & Peter Winzer & Marko Lončar, 2018. "Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages," Nature, Nature, vol. 562(7725), pages 101-104, October.
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    1. Maoliang Wei & Kai Xu & Bo Tang & Junying Li & Yiting Yun & Peng Zhang & Yingchun Wu & Kangjian Bao & Kunhao Lei & Zequn Chen & Hui Ma & Chunlei Sun & Ruonan Liu & Ming Li & Lan Li & Hongtao Lin, 2024. "Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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