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A singlet-triplet hole-spin qubit in MOS silicon

Author

Listed:
  • S. D. Liles

    (University of New South Wales)

  • D. J. Halverson

    (University of New South Wales)

  • Z. Wang

    (University of New South Wales)

  • A. Shamim

    (University of New South Wales)

  • R. S. Eggli

    (University of Basel)

  • I. K. Jin

    (University of New South Wales
    RIKEN)

  • J. Hillier

    (University of New South Wales)

  • K. Kumar

    (University of New South Wales)

  • I. Vorreiter

    (University of New South Wales)

  • M. J. Rendell

    (University of New South Wales)

  • J. Y. Huang

    (University of New South Wales
    Diraq)

  • C. C. Escott

    (University of New South Wales
    Diraq)

  • F. E. Hudson

    (University of New South Wales
    Diraq)

  • W. H. Lim

    (University of New South Wales
    Diraq)

  • D. Culcer

    (University of New South Wales)

  • A. S. Dzurak

    (University of New South Wales
    Diraq)

  • A. R. Hamilton

    (University of New South Wales)

Abstract

Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimise spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We demonstrate rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 μs using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.

Suggested Citation

  • S. D. Liles & D. J. Halverson & Z. Wang & A. Shamim & R. S. Eggli & I. K. Jin & J. Hillier & K. Kumar & I. Vorreiter & M. J. Rendell & J. Y. Huang & C. C. Escott & F. E. Hudson & W. H. Lim & D. Culcer, 2024. "A singlet-triplet hole-spin qubit in MOS silicon," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-51902-9
    DOI: 10.1038/s41467-024-51902-9
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    References listed on IDEAS

    as
    1. Ryan M. Jock & N. Tobias Jacobson & Patrick Harvey-Collard & Andrew M. Mounce & Vanita Srinivasa & Dan R. Ward & John Anderson & Ron Manginell & Joel R. Wendt & Martin Rudolph & Tammy Pluym & John Kin, 2018. "A silicon metal-oxide-semiconductor electron spin-orbit qubit," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
    2. B. M. Maune & M. G. Borselli & B. Huang & T. D. Ladd & P. W. Deelman & K. S. Holabird & A. A. Kiselev & I. Alvarado-Rodriguez & R. S. Ross & A. E. Schmitz & M. Sokolich & C. A. Watson & M. F. Gyure & , 2012. "Coherent singlet-triplet oscillations in a silicon-based double quantum dot," Nature, Nature, vol. 481(7381), pages 344-347, January.
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