Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite
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DOI: 10.1038/s41467-022-33617-x
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- Jiabiao Chen & Zhaochao Liu & Xinyue Dong & Zhansheng Gao & Yuxuan Lin & Yuyu He & Yingnan Duan & Tonghuai Cheng & Zhengyang Zhou & Huixia Fu & Feng Luo & Jinxiong Wu, 2023. "Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
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