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Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

Author

Listed:
  • Mengjiao Han

    (Southern University of Science and Technology
    Southeast University
    Songshan Lake Materials Laboratory)

  • Cong Wang

    (Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China)

  • Kangdi Niu

    (Southern University of Science and Technology)

  • Qishuo Yang

    (Southern University of Science and Technology)

  • Chuanshou Wang

    (Southern University of Science and Technology)

  • Xi Zhang

    (Northwestern Polytechnical University)

  • Junfeng Dai

    (Southern University of Science and Technology)

  • Yujia Wang

    (Chinese Academy of Sciences)

  • Xiuliang Ma

    (Songshan Lake Materials Laboratory
    Chinese Academy of Sciences)

  • Junling Wang

    (Southern University of Science and Technology)

  • Lixing Kang

    (Chinese Academy of Sciences)

  • Wei Ji

    (Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China)

  • Junhao Lin

    (Southern University of Science and Technology
    Southern University of Science and Technology)

Abstract

Emerging functionalities in two-dimensional materials, such as ferromagnetism, superconductivity and ferroelectricity, open new avenues for promising nanoelectronic applications. Here, we report the discovery of intrinsic in-plane room-temperature ferroelectricity in two-dimensional Bi2TeO5 grown by chemical vapor deposition, where spontaneous polarization originates from Bi column displacements. We found an intercalated buffer layer consist of mixed Bi/Te column as 180° domain wall which enables facile polarized domain engineering, including continuously tunable domain width by pinning different concentration of buffer layers, and even ferroelectric-antiferroelectric phase transition when the polarization unit is pinned down to single atomic column. More interestingly, the intercalated Bi/Te buffer layer can interconvert to polarized Bi columns which end up with series terraced domain walls and unusual fan-shaped ferroelectric domain. The buffer layer induced size and shape tunable ferroelectric domain in two-dimensional Bi2TeO5 offer insights into the manipulation of functionalities in van der Waals materials for future nanoelectronics.

Suggested Citation

  • Mengjiao Han & Cong Wang & Kangdi Niu & Qishuo Yang & Chuanshou Wang & Xi Zhang & Junfeng Dai & Yujia Wang & Xiuliang Ma & Junling Wang & Lixing Kang & Wei Ji & Junhao Lin, 2022. "Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-33617-x
    DOI: 10.1038/s41467-022-33617-x
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