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Refreshable memristor via dynamic allocation of ferro-ionic phase for neural reuse

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  • Jiangang Chen

    (University of Electronic Science and Technology of China)

  • Zhixing Wen

    (University of Electronic Science and Technology of China
    University of Electronic Science and Technology of China)

  • Fan Yang

    (University of Electronic Science and Technology of China)

  • Renji Bian

    (University of Electronic Science and Technology of China)

  • Qirui Zhang

    (University of Electronic Science and Technology of China)

  • Er Pan

    (University of Electronic Science and Technology of China)

  • Yuelei Zeng

    (University of Electronic Science and Technology of China)

  • Xiao Luo

    (University of Electronic Science and Technology of China)

  • Qing Liu

    (University of Electronic Science and Technology of China)

  • Liang-Jian Deng

    (University of Electronic Science and Technology of China)

  • Fucai Liu

    (University of Electronic Science and Technology of China
    University of Electronic Science and Technology of China)

Abstract

Neural reuse can drive organisms to generalize knowledge across various tasks during learning. However, existing devices mostly focus on architectures rather than network functions, lacking the mimic capabilities of neural reuse. Here, we demonstrate a rational device designed based on ferroionic CuInP2S6, to accomplish the neural reuse function, enabled by dynamic allocation of the ferro-ionic phase. It allows for dynamic refresh and collaborative work between volatile and non-volatile modes to support the entire neural reuse process. Notably, ferroelectric polarization can remain consistent even after undergoing the refresh process, providing a foundation for the shared functionality across multiple tasks. By implementing neural reuse, the classification accuracy of neuromorphic hardware can improve by 17%, while the consumption is reduced by 40%; in multi-task scenarios, its training speed is accelerated by 2200%, while its generalization ability is enhanced by 21%. Our results are promising towards building refreshable hardware platforms based on ferroelectric-ionic combination capable of accommodating more efficient algorithms and architectures.

Suggested Citation

  • Jiangang Chen & Zhixing Wen & Fan Yang & Renji Bian & Qirui Zhang & Er Pan & Yuelei Zeng & Xiao Luo & Qing Liu & Liang-Jian Deng & Fucai Liu, 2025. "Refreshable memristor via dynamic allocation of ferro-ionic phase for neural reuse," Nature Communications, Nature, vol. 16(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-024-55701-0
    DOI: 10.1038/s41467-024-55701-0
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    1. Xingan Jiang & Xueyun Wang & Xiaolei Wang & Xiangping Zhang & Ruirui Niu & Jianming Deng & Sheng Xu & Yingzhuo Lun & Yanyu Liu & Tianlong Xia & Jianming Lu & Jiawang Hong, 2022. "Manipulation of current rectification in van der Waals ferroionic CuInP2S6," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    2. Filippo Pizzocchero & Lene Gammelgaard & Bjarke S. Jessen & José M. Caridad & Lei Wang & James Hone & Peter Bøggild & Timothy J. Booth, 2016. "The hot pick-up technique for batch assembly of van der Waals heterostructures," Nature Communications, Nature, vol. 7(1), pages 1-10, September.
    3. Peng Yao & Huaqiang Wu & Bin Gao & Jianshi Tang & Qingtian Zhang & Wenqiang Zhang & J. Joshua Yang & He Qian, 2020. "Fully hardware-implemented memristor convolutional neural network," Nature, Nature, vol. 577(7792), pages 641-646, January.
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