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Origin of giant electric-field-induced strain in faulted alkali niobate films

Author

Listed:
  • Moaz Waqar

    (National University of Singapore
    A*STAR (Agency for Science, Technology and Research)
    National University of Singapore)

  • Haijun Wu

    (Xi’an Jiaotong University)

  • Khuong Phuong Ong

    (A*STAR (Agency for Science, Technology and Research))

  • Huajun Liu

    (A*STAR (Agency for Science, Technology and Research))

  • Changjian Li

    (National University of Singapore)

  • Ping Yang

    (National University of Singapore
    National University of Singapore)

  • Wenjie Zang

    (National University of Singapore)

  • Weng Heng Liew

    (A*STAR (Agency for Science, Technology and Research))

  • Caozheng Diao

    (National University of Singapore)

  • Shibo Xi

    (A*STAR (Agency for Science, Technology and Research))

  • David J. Singh

    (University of Missouri)

  • Qian He

    (National University of Singapore)

  • Kui Yao

    (A*STAR (Agency for Science, Technology and Research)
    National University of Singapore)

  • Stephen J. Pennycook

    (National University of Singapore
    National University of Singapore)

  • John Wang

    (National University of Singapore
    A*STAR (Agency for Science, Technology and Research)
    National University of Singapore)

Abstract

A large electromechanical response in ferroelectrics is highly desirable for developing high-performance sensors and actuators. Enhanced electromechanical coupling in ferroelectrics is usually obtained at morphotropic phase boundaries requiring stoichiometric control of complex compositions. Recently it was shown that giant piezoelectricity can be obtained in films with nanopillar structures. Here, we elucidate its origin in terms of atomic structure and demonstrate a different system with a greatly enhanced response. This is in non-stoichiometric potassium sodium niobate epitaxial thin films with a high density of self-assembled planar faults. A giant piezoelectric coefficient of ∼1900 picometer per volt is demonstrated at 1 kHz, which is almost double the highest ever reported effective piezoelectric response in any existing thin films. The large oxygen octahedral distortions and the coupling between the structural distortion and polarization orientation mediated by charge redistribution at the planar faults enable the giant electric-field-induced strain. Our findings demonstrate an important mechanism for realizing the unprecedentedly giant electromechanical coupling and can be extended to many other material functions by engineering lattice faults in non-stoichiometric compositions.

Suggested Citation

  • Moaz Waqar & Haijun Wu & Khuong Phuong Ong & Huajun Liu & Changjian Li & Ping Yang & Wenjie Zang & Weng Heng Liew & Caozheng Diao & Shibo Xi & David J. Singh & Qian He & Kui Yao & Stephen J. Pennycook, 2022. "Origin of giant electric-field-induced strain in faulted alkali niobate films," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31630-8
    DOI: 10.1038/s41467-022-31630-8
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    References listed on IDEAS

    as
    1. Huaxiang Fu & Ronald E. Cohen, 2000. "Polarization rotation mechanism for ultrahigh electromechanical response in single-crystal piezoelectrics," Nature, Nature, vol. 403(6767), pages 281-283, January.
    2. Tomas Sluka & Alexander K. Tagantsev & Dragan Damjanovic & Maxim Gureev & Nava Setter, 2012. "Enhanced electromechanical response of ferroelectrics due to charged domain walls," Nature Communications, Nature, vol. 3(1), pages 1-7, January.
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    2. Shubham Kumar Parate & Sandeep Vura & Subhajit Pal & Upanya Khandelwal & Rama Satya Sandilya Ventrapragada & Rajeev Kumar Rai & Sri Harsha Molleti & Vishnu Kumar & Girish Patil & Mudit Jain & Ambresh , 2024. "Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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