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High-specific-power flexible transition metal dichalcogenide solar cells

Author

Listed:
  • Koosha Nassiri Nazif

    (Stanford University)

  • Alwin Daus

    (Stanford University)

  • Jiho Hong

    (Stanford University
    Stanford University)

  • Nayeun Lee

    (Stanford University
    Stanford University)

  • Sam Vaziri

    (Stanford University)

  • Aravindh Kumar

    (Stanford University)

  • Frederick Nitta

    (Stanford University)

  • Michelle E. Chen

    (Stanford University)

  • Siavash Kananian

    (Stanford University)

  • Raisul Islam

    (Stanford University)

  • Kwan-Ho Kim

    (Sungkyunkwan University
    University of Pennsylvania)

  • Jin-Hong Park

    (Sungkyunkwan University
    Sungkyunkwan University)

  • Ada S. Y. Poon

    (Stanford University)

  • Mark L. Brongersma

    (Stanford University
    Stanford University
    Stanford University)

  • Eric Pop

    (Stanford University
    Stanford University)

  • Krishna C. Saraswat

    (Stanford University
    Stanford University)

Abstract

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoOx capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g−1 for flexible TMD (WSe2) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g−1, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

Suggested Citation

  • Koosha Nassiri Nazif & Alwin Daus & Jiho Hong & Nayeun Lee & Sam Vaziri & Aravindh Kumar & Frederick Nitta & Michelle E. Chen & Siavash Kananian & Raisul Islam & Kwan-Ho Kim & Jin-Hong Park & Ada S. Y, 2021. "High-specific-power flexible transition metal dichalcogenide solar cells," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27195-7
    DOI: 10.1038/s41467-021-27195-7
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    References listed on IDEAS

    as
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    2. Soo Jin Kim & Pengyu Fan & Ju-Hyung Kang & Mark L. Brongersma, 2015. "Creating semiconductor metafilms with designer absorption spectra," Nature Communications, Nature, vol. 6(1), pages 1-8, November.
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    4. Sangmoo Jeong & Michael D. McGehee & Yi Cui, 2013. "All-back-contact ultra-thin silicon nanocone solar cells with 13.7% power conversion efficiency," Nature Communications, Nature, vol. 4(1), pages 1-7, December.
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    Cited by:

    1. Salvador Merino & Javier Martinez & Francisco Guzman & Juan de Dios Lara & Rafael Guzman & Francisco Sanchez & Juan Ramon Heredia & Mariano Sidrach de Cardona, 2023. "Dynamic Reconfiguration to Optimize Energy Production on Moving Photovoltaic Panels," Sustainability, MDPI, vol. 15(14), pages 1-17, July.

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