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Wide Band Gap Devices and Their Application in Power Electronics

Author

Listed:
  • Amit Kumar

    (Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo 2, 09123 Cagliari, Italy)

  • Milad Moradpour

    (Centre for Industrial Electronics, University of Southern Denmark, 6400 Sønderborg, Denmark)

  • Michele Losito

    (Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo 2, 09123 Cagliari, Italy)

  • Wulf-Toke Franke

    (Centre for Industrial Electronics, University of Southern Denmark, 6400 Sønderborg, Denmark)

  • Suganthi Ramasamy

    (Department of Electrical Engineering, Government College of Technology, Coimbatore 641013, Tamil Nadu, India)

  • Roberto Baccoli

    (Department of Environmental Civil Engineering and Architecture, University of Cagliari, Via Marengo 2, 09123 Cagliari, Italy)

  • Gianluca Gatto

    (Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo 2, 09123 Cagliari, Italy)

Abstract

Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shift in regard to energy efficiency and working with respect to the devices based on mature silicon (Si). Gallium nitride (GaN) and silicon carbide (SiC) have been treated as one of the most promising WBG materials that allow the performance limits of matured Si switching devices to be significantly exceeded. WBG-based power devices enable fast switching with lower power losses at higher switching frequency and hence, allow the development of high power density and high efficiency power converters. This paper reviews popular SiC and GaN power devices, discusses the associated merits and challenges, and finally their applications in power electronics.

Suggested Citation

  • Amit Kumar & Milad Moradpour & Michele Losito & Wulf-Toke Franke & Suganthi Ramasamy & Roberto Baccoli & Gianluca Gatto, 2022. "Wide Band Gap Devices and Their Application in Power Electronics," Energies, MDPI, vol. 15(23), pages 1-26, December.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:23:p:9172-:d:992397
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    References listed on IDEAS

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    4. Baochao Wang & Shili Dong & Shanlin Jiang & Chun He & Jianhui Hu & Hui Ye & Xuezhen Ding, 2019. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs," Energies, MDPI, vol. 12(6), pages 1-13, March.
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    Cited by:

    1. Abdulkarim Athwer & Ahmed Darwish, 2023. "A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems," Energies, MDPI, vol. 16(14), pages 1-44, July.

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