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A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Author

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  • Baochao Wang

    (School of Electrical Engineering and Automation, Harbin Institute of Technology, 92 Street Xidazhi, Harbin 150001, China)

  • Shili Dong

    (School of Electrical Engineering and Automation, Harbin Institute of Technology, 92 Street Xidazhi, Harbin 150001, China)

  • Shanlin Jiang

    (School of Electrical Engineering and Automation, Harbin Institute of Technology, 92 Street Xidazhi, Harbin 150001, China)

  • Chun He

    (School of Electrical Engineering and Automation, Harbin Institute of Technology, 92 Street Xidazhi, Harbin 150001, China)

  • Jianhui Hu

    (School of Electrical Engineering and Automation, Harbin Institute of Technology, 92 Street Xidazhi, Harbin 150001, China)

  • Hui Ye

    (State Grid Jinan Changqing Power Supply Company, 15508 Road Jingshixi, Jinan 250300, China)

  • Xuezhen Ding

    (Institute of Economics and Technology of Jinan Power Supply Company of State Grid Corporation of China, 59 Yuhan Road, Jinan 250012, China)

Abstract

The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.

Suggested Citation

  • Baochao Wang & Shili Dong & Shanlin Jiang & Chun He & Jianhui Hu & Hui Ye & Xuezhen Ding, 2019. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs," Energies, MDPI, vol. 12(6), pages 1-13, March.
  • Handle: RePEc:gam:jeners:v:12:y:2019:i:6:p:1146-:d:216828
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    References listed on IDEAS

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    1. Matteo Meneghini & Oliver Hilt & Joachim Wuerfl & Gaudenzio Meneghesso, 2017. "Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate," Energies, MDPI, vol. 10(2), pages 1-15, January.
    2. Po-Chien Chou & Szu-Hao Chen & Ting-En Hsieh & Stone Cheng & Jesús A. Del Alamo & Edward Yi Chang, 2017. "Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications," Energies, MDPI, vol. 10(2), pages 1-12, February.
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    Cited by:

    1. Viktor Shevchenko & Bohdan Pakhaliuk & Oleksandr Husev & Oleksandr Veligorskyi & Deniss Stepins & Ryszard Strzelecki, 2020. "Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter," Energies, MDPI, vol. 13(17), pages 1-16, September.
    2. Amit Kumar & Milad Moradpour & Michele Losito & Wulf-Toke Franke & Suganthi Ramasamy & Roberto Baccoli & Gianluca Gatto, 2022. "Wide Band Gap Devices and Their Application in Power Electronics," Energies, MDPI, vol. 15(23), pages 1-26, December.
    3. David Lumbreras & Manel Vilella & Jordi Zaragoza & Néstor Berbel & Josep Jordà & Alfonso Collado, 2021. "Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion," Energies, MDPI, vol. 14(19), pages 1-28, October.
    4. Viktor Shevchenko & Bohdan Pakhaliuk & Janis Zakis & Oleksandr Veligorskyi & Jaroslaw Luszcz & Oleksandr Husev & Oleksandr Lytvyn & Oleksandr Matiushkin, 2021. "Closed-Loop Control System Design for Wireless Charging of Low-Voltage EV Batteries with Time-Delay Constraints," Energies, MDPI, vol. 14(13), pages 1-21, June.
    5. Salvatore Musumeci & Fabio Mandrile & Vincenzo Barba & Marco Palma, 2021. "Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review," Energies, MDPI, vol. 14(19), pages 1-30, October.

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