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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter

Author

Listed:
  • Viktor Shevchenko

    (Chernihiv Power Electronics Laboratory, BRAS Department, Educational-Scientific Institute of Electronic and Information Technologies, Chernihiv National University of Technology, 14039 Chernihiv, Ukraine)

  • Bohdan Pakhaliuk

    (Chernihiv Power Electronics Laboratory, BRAS Department, Educational-Scientific Institute of Electronic and Information Technologies, Chernihiv National University of Technology, 14039 Chernihiv, Ukraine
    Faculty of Electrical and Control Engineering, Gdansk University of Technology, 80-233 Gdansk, Poland)

  • Oleksandr Husev

    (Chernihiv Power Electronics Laboratory, BRAS Department, Educational-Scientific Institute of Electronic and Information Technologies, Chernihiv National University of Technology, 14039 Chernihiv, Ukraine
    Power Electronics Research Group, Tallinn University of Technology, 12616 Tallinn, Estonia)

  • Oleksandr Veligorskyi

    (Chernihiv Power Electronics Laboratory, BRAS Department, Educational-Scientific Institute of Electronic and Information Technologies, Chernihiv National University of Technology, 14039 Chernihiv, Ukraine)

  • Deniss Stepins

    (Institute of Industrial Electronics and Electrical Engineering, Riga Technical University, 12/K1 Azenes Street, LV-1658 Riga, Latvia)

  • Ryszard Strzelecki

    (Faculty of Electrical and Control Engineering, Gdansk University of Technology, 80-233 Gdansk, Poland)

Abstract

A promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the system is performed: semiconductors and magnetic elements. System modeling was performed using Power Electronics Simulation Software (PSIM). It is shown that the main losses of the system are static losses in the filter inductor and rectifier diodes on the secondary side, while GaN transistors can be successfully used for the wireless power transfer system. The main features of the Printed Circuit Board (PCB) design of GaN transistors are considered in advance.

Suggested Citation

  • Viktor Shevchenko & Bohdan Pakhaliuk & Oleksandr Husev & Oleksandr Veligorskyi & Deniss Stepins & Ryszard Strzelecki, 2020. "Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter," Energies, MDPI, vol. 13(17), pages 1-16, September.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:17:p:4535-:d:407464
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    References listed on IDEAS

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    1. Baochao Wang & Shili Dong & Shanlin Jiang & Chun He & Jianhui Hu & Hui Ye & Xuezhen Ding, 2019. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs," Energies, MDPI, vol. 12(6), pages 1-13, March.
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    Cited by:

    1. Ying Liu & Liangyi Pan & Shunyu Yao & Jiantao Zhang & Shumei Cui & Chunbo Zhu, 2024. "A Review on the Recent Development of High-Frequency Inverters for Wireless Power Transfer," Energies, MDPI, vol. 17(20), pages 1-21, October.
    2. Viktor Shevchenko & Bohdan Pakhaliuk & Janis Zakis & Oleksandr Veligorskyi & Jaroslaw Luszcz & Oleksandr Husev & Oleksandr Lytvyn & Oleksandr Matiushkin, 2021. "Closed-Loop Control System Design for Wireless Charging of Low-Voltage EV Batteries with Time-Delay Constraints," Energies, MDPI, vol. 14(13), pages 1-21, June.

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