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Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

Author

Listed:
  • Enrico Bottaro

    (Department of Electrical Electronic and Computer Engineering, University of Catania, 95125 Catania, Italy)

  • Santi Agatino Rizzo

    (Department of Electrical Electronic and Computer Engineering, University of Catania, 95125 Catania, Italy)

  • Nunzio Salerno

    (Department of Electrical Electronic and Computer Engineering, University of Catania, 95125 Catania, Italy)

Abstract

Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. At the design stage of a power converter, the proper modelling of the GaN HEMT is essential to benefit from their good features and to account for the limits of the current technology. Circuit models of power MOSFETs have been deeply investigated by academia and industry for a long time. These models are able to emulate the datasheet information, and they are usually provided by device manufacturers as netlists that can be simulated in any kind of SPICE-like software. This paper firstly highlights the similarities and differences between MOSFETs and GaN HEMTs at the datasheet level. According to this analysis, the features of MOSFET circuit models that can be adopted for GaN HEMT modelling are discussed. This task has been accomplished by overviewing the literature on MOSFETs circuit models as well as analysing manufacturers netlists, thus highlighting the models MOSFETs valid or adaptable to GaN HEMTs. The study has revealed show that some models can be adapted for the GaN HEMT devices to emulate static characteristics at room temperature while the MOSFET models of dynamic characteristics can be used for GaN HEMT devices. This study enables the devices modellers to speed up the GaN HEMT modelling thanks to the use of some well-established MOSFET models. In this perspective, some suggestions to develop accurate GaN HEMT models are also provided.

Suggested Citation

  • Enrico Bottaro & Santi Agatino Rizzo & Nunzio Salerno, 2022. "Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review," Energies, MDPI, vol. 15(9), pages 1-32, May.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:9:p:3415-:d:810413
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    References listed on IDEAS

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    1. Loizos Efthymiou & Gianluca Camuso & Giorgia Longobardi & Terry Chien & Max Chen & Florin Udrea, 2017. "On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs," Energies, MDPI, vol. 10(3), pages 1-11, March.
    2. Loris Pace & Nadir Idir & Thierry Duquesne & Jean-Claude De Jaeger, 2021. "Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations," Energies, MDPI, vol. 14(5), pages 1-17, March.
    3. Il-Oun Lee & Joongheon Kim & Woojoo Lee, 2017. "A High-Efficient Low-Cost Converter for Capacitive Wireless Power Transfer Systems," Energies, MDPI, vol. 10(9), pages 1-14, September.
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    Cited by:

    1. Enrico Alfredo Bottaro & Santi Agatino Rizzo, 2023. "An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT," Energies, MDPI, vol. 16(18), pages 1-19, September.
    2. Amit Kumar & Milad Moradpour & Michele Losito & Wulf-Toke Franke & Suganthi Ramasamy & Roberto Baccoli & Gianluca Gatto, 2022. "Wide Band Gap Devices and Their Application in Power Electronics," Energies, MDPI, vol. 15(23), pages 1-26, December.

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