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SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter

Author

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  • Carlos D. Fuentes

    (Electronics Engineering Department, Universidad Técnica Federico Santa María, Valparaíso 2390123, Chile
    Professur Leistungselektronik, Elektrotechnisches Institut, Technische Universität Dresden, 01062 Dresden, Germany)

  • Marcus Müller

    (Professur Leistungselektronik, Elektrotechnisches Institut, Technische Universität Dresden, 01062 Dresden, Germany)

  • Steffen Bernet

    (Professur Leistungselektronik, Elektrotechnisches Institut, Technische Universität Dresden, 01062 Dresden, Germany)

  • Samir Kouro

    (Electronics Engineering Department, Universidad Técnica Federico Santa María, Valparaíso 2390123, Chile)

Abstract

In this paper, a design driven comparison between two 190 kVA industrial three-phase two-level voltage source converter (2L-VSC) designs based in silicon carbide (SiC) and silicon (Si) for 690 V grids is presented. These two designs were conceived to have the same nominal power, while switching at reasonable switching speeds and requiring the same case to ambient thermal impedance. Under these conditions, the designs were studied to detect the potential gains and limitations that a pragmatic converter design could feature when using these two technologies regarding cost, efficiency, size and weight. To achieve this, experimentally determined semiconductor characteristics were used to perform simulations, the results of which were then used to design the essential parts of the converter. These designed parts were then corroborated with manufacturers, from which physical characteristics of all designed components were obtained. The results show that the SiC based design presents substantial weight savings and an 11% system cost reduction, while preserving its traditional characteristics such as improved overall efficiency when compared to the silicon based design under the given design requirements and constraints.

Suggested Citation

  • Carlos D. Fuentes & Marcus Müller & Steffen Bernet & Samir Kouro, 2021. "SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter," Energies, MDPI, vol. 14(11), pages 1-20, May.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:11:p:3054-:d:561477
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    References listed on IDEAS

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    1. Serhii Stepenko & Oleksandr Husev & Dmitri Vinnikov & Carlos Roncero-Clemente & Sergio Pires Pimentel & Elena Santasheva, 2019. "Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications," Energies, MDPI, vol. 12(13), pages 1-17, June.
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    Cited by:

    1. Amit Kumar & Milad Moradpour & Michele Losito & Wulf-Toke Franke & Suganthi Ramasamy & Roberto Baccoli & Gianluca Gatto, 2022. "Wide Band Gap Devices and Their Application in Power Electronics," Energies, MDPI, vol. 15(23), pages 1-26, December.
    2. Kotb B. Tawfiq & Arafa S. Mansour & Peter Sergeant, 2023. "Mathematical Design and Analysis of Three-Phase Inverters: Different Wide Bandgap Semiconductor Technologies and DC-Link Capacitor Selection," Mathematics, MDPI, vol. 11(9), pages 1-18, May.

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