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Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC

Author

Listed:
  • Vincenzo d’Alessandro

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Lorenzo Codecasa

    (Department of Electronics, Information and Bioengineering, Politecnico di Milano, 20133 Milan, Italy)

  • Antonio Pio Catalano

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Ciro Scognamillo

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

Abstract

This paper discusses the benefits of an advanced highly-efficient approach to static and dynamic electrothermal simulations of multicellular silicon carbide (SiC) power MOSFETs. The strategy is based on a fully circuital representation of the device, which is discretized into an assigned number of individual cells, high enough to analyze temperature and current nonuniformities over the active area. The cells are described with subcircuits implementing a simple transistor model that accounts for the utmost influence of the traps at the SiC/SiO 2 interface. The power-temperature feedback is emulated with an equivalent network corresponding to a compact thermal model automatically generated by the FANTASTIC tool from an accurate 3D mesh of the component under test. The resulting macrocircuit can be solved by any SPICE-like simulation program with low computational burden and rare occurrence of convergence issues.

Suggested Citation

  • Vincenzo d’Alessandro & Lorenzo Codecasa & Antonio Pio Catalano & Ciro Scognamillo, 2020. "Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC," Energies, MDPI, vol. 13(17), pages 1-27, September.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:17:p:4563-:d:408253
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    References listed on IDEAS

    as
    1. Asad Fayyaz & Gianpaolo Romano & Jesus Urresti & Michele Riccio & Alberto Castellazzi & Andrea Irace & Nick Wright, 2017. "A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs," Energies, MDPI, vol. 10(4), pages 1-15, April.
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    Citations

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    Cited by:

    1. Krzysztof Górecki, 2021. "Influence of the Semiconductor Devices Cooling Conditions on Characteristics of Selected DC–DC Converters," Energies, MDPI, vol. 14(6), pages 1-16, March.
    2. Krzysztof Górecki & Krzysztof Posobkiewicz, 2022. "Cooling Systems of Power Semiconductor Devices—A Review," Energies, MDPI, vol. 15(13), pages 1-29, June.
    3. Krzysztof Górecki, 2023. "Influence of Parasitic Elements and Operating Conditions of Semiconductor Switches on Power Losses and the Junction Temperature of These Switches," Energies, MDPI, vol. 16(15), pages 1-21, August.
    4. Ciro Scognamillo & Antonio Pio Catalano & Michele Riccio & Vincenzo d’Alessandro & Lorenzo Codecasa & Alessandro Borghese & Ravi Nath Tripathi & Alberto Castellazzi & Giovanni Breglio & Andrea Irace, 2021. "Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics," Energies, MDPI, vol. 14(15), pages 1-17, August.
    5. Paweł Górecki & Krzysztof Górecki, 2020. "Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter," Energies, MDPI, vol. 14(1), pages 1-16, December.
    6. Krzysztof Górecki & Krzysztof Posobkiewicz, 2021. "Selected Problems of Power MOSFETs Thermal Parameters Measurements," Energies, MDPI, vol. 14(24), pages 1-22, December.

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