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Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

Author

Listed:
  • Ciro Scognamillo

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Antonio Pio Catalano

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Michele Riccio

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Vincenzo d’Alessandro

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Lorenzo Codecasa

    (Department of Electronics, Information and Bioengineering, Politecnico di Milano, 20133 Milan, Italy)

  • Alessandro Borghese

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Ravi Nath Tripathi

    (SP2-Lab, Faculty of Engineering, Kyoto University of Advanced Science, Kyoto 6168577, Japan)

  • Alberto Castellazzi

    (SP2-Lab, Faculty of Engineering, Kyoto University of Advanced Science, Kyoto 6168577, Japan)

  • Giovanni Breglio

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Andrea Irace

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

Abstract

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.

Suggested Citation

  • Ciro Scognamillo & Antonio Pio Catalano & Michele Riccio & Vincenzo d’Alessandro & Lorenzo Codecasa & Alessandro Borghese & Ravi Nath Tripathi & Alberto Castellazzi & Giovanni Breglio & Andrea Irace, 2021. "Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics," Energies, MDPI, vol. 14(15), pages 1-17, August.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:15:p:4683-:d:606865
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    References listed on IDEAS

    as
    1. Vincenzo d’Alessandro & Lorenzo Codecasa & Antonio Pio Catalano & Ciro Scognamillo, 2020. "Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC," Energies, MDPI, vol. 13(17), pages 1-27, September.
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    Cited by:

    1. Filippo Pellitteri & Vincenzo Di Dio & Christian Puccio & Rosario Miceli, 2022. "A Model of DC-DC Converter with Switched-Capacitor Structure for Electric Vehicle Applications," Energies, MDPI, vol. 15(3), pages 1-20, February.

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