An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
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DOI: 10.1016/j.chaos.2022.112247
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- Koo, Ryun-Han & Shin, Wonjun & Jung, Gyuweon & Kwon, Dongseok & Kim, Jae-Joon & Kwon, Daewoong & Lee, Jong-Ho, 2024. "Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity," Chaos, Solitons & Fractals, Elsevier, vol. 183(C).
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Keywords
Resistive switching memory; RRAM; Temperature characterization; Simulation; Variability; Modeling; Kinetic Monte Carlo; Series resistance;All these keywords.
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