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Logic-in-memory application of CMOS compatible silicon nitride memristor

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  • Kim, Dahye
  • Kim, Sunghun
  • Kim, Sungjun

Abstract

Resistive switching memory (RRAM) performs its role as a next-generation memory that overcomes the limitations of von Neumann computing. RRAM can be stated as set or reset state by applying a certain voltage and has advantages in maintaining the states with non-volatile characteristics. That is, both the change of state and storage of operations occur in a single RRAM device. Both bipolar RRAM which operates on two opposite voltage polarity, and unipolar RRAM, which operates on a single polarity, can be combined with the switch to effectively implement the Boolean function. In this paper, both unipolar and bipolar characteristics are conducted in CMOS compatible Ni/SiN/Si RRAM devices. We succeed in demonstrating 14 logical operators out of 16 by applying pulses to implement the Boolean function. In addition, we prove that the other two logical operators cannot be represented by the existing system, and we also suggest ideas to solve this problem.

Suggested Citation

  • Kim, Dahye & Kim, Sunghun & Kim, Sungjun, 2021. "Logic-in-memory application of CMOS compatible silicon nitride memristor," Chaos, Solitons & Fractals, Elsevier, vol. 153(P2).
    • Handle: RePEc:eee:chsofr:v:153:y:2021:i:p2:s0960077921008948
    DOI: 10.1016/j.chaos.2021.111540
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    References listed on IDEAS

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