Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity
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DOI: 10.1016/j.chaos.2024.114861
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- Vincent Garcia & Manuel Bibes, 2014. "Ferroelectric tunnel junctions for information storage and processing," Nature Communications, Nature, vol. 5(1), pages 1-12, September.
- Maldonado, D. & Aguilera-Pedregosa, C. & Vinuesa, G. & García, H. & Dueñas, S. & Castán, H. & Aldana, S. & González, M.B. & Moreno, E. & Jiménez-Molinos, F. & Campabadal, F. & Roldán, J.B., 2022. "An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices," Chaos, Solitons & Fractals, Elsevier, vol. 160(C).
- Vasileiadis, Nikolaos & Loukas, Panagiotis & Karakolis, Panagiotis & Ioannou-Sougleridis, Vassilios & Normand, Pascal & Ntinas, Vasileios & Fyrigos, Iosif-Angelos & Karafyllidis, Ioannis & Sirakoulis,, 2021. "Multi-level resistance switching and random telegraph noise analysis of nitride based memristors," Chaos, Solitons & Fractals, Elsevier, vol. 153(P1).
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Keywords
Low-frequency noise (LFN); Stochastic read noise; Current fluctuation; Transient response; Ferroelectric tunnel junction (FTJ); Hafnium zirconium oxide (HfZrO2); Crystallinity;All these keywords.
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