IDEAS home Printed from https://ideas.repec.org/a/eee/chsofr/v183y2024ics0960077924004132.html
   My bibliography  Save this article

Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity

Author

Listed:
  • Koo, Ryun-Han
  • Shin, Wonjun
  • Jung, Gyuweon
  • Kwon, Dongseok
  • Kim, Jae-Joon
  • Kwon, Daewoong
  • Lee, Jong-Ho

Abstract

This study comprehensively analyzes of the influence of bottom electrode crystallinity on the stochastic noise in ferroelectric tunnel junctions (FTJs). We perform a comparative analysis of stochastic read noise in FTJ devices with crystalline silicon (FTJc-Si) and poly-silicon (FTJpoly-Si) bottom electrodes by utilizing low-frequency noise spectroscopy and multi-frequency conductance measurements. The results indicate that FTJpoly-Si exhibits a 50 % higher read current fluctuation in the high-resistance state (HRS) at high read currents compared to FTJc-Si due to differences in interface trap density and the subsequent barrier height fluctuations. Although the crystallinity of the bottom electrode affects the noise in the HRS, the noise in the low-resistance state (LRS) remains consistent with the consequence of bulk-limited Poole-Frenkel emission. These findings clarify the relationship between bottom electrode crystallinity and stochastic noise in FTJs, providing crucial insights for the design and operation of future ferroelectric-based memory.

Suggested Citation

  • Koo, Ryun-Han & Shin, Wonjun & Jung, Gyuweon & Kwon, Dongseok & Kim, Jae-Joon & Kwon, Daewoong & Lee, Jong-Ho, 2024. "Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity," Chaos, Solitons & Fractals, Elsevier, vol. 183(C).
    • Handle: RePEc:eee:chsofr:v:183:y:2024:i:c:s0960077924004132
    DOI: 10.1016/j.chaos.2024.114861
    as

    Download full text from publisher

    File URL: http://www.sciencedirect.com/science/article/pii/S0960077924004132
    Download Restriction: Full text for ScienceDirect subscribers only
    File URL: https://libkey.io/10.1016/j.chaos.2024.114861?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    References listed on IDEAS

    as
    1. Mahata, Chandreswar & Kim, Sungjun, 2021. "Electrical and optical artificial synapses properties of TiN-nanoparticles incorporated HfAlO-alloy based memristor," Chaos, Solitons & Fractals, Elsevier, vol. 153(P1).
    2. Maldonado, D. & Aguilera-Pedregosa, C. & Vinuesa, G. & García, H. & Dueñas, S. & Castán, H. & Aldana, S. & González, M.B. & Moreno, E. & Jiménez-Molinos, F. & Campabadal, F. & Roldán, J.B., 2022. "An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices," Chaos, Solitons & Fractals, Elsevier, vol. 160(C).
    3. Vincent Garcia & Manuel Bibes, 2014. "Ferroelectric tunnel junctions for information storage and processing," Nature Communications, Nature, vol. 5(1), pages 1-12, September.
    4. Vasileiadis, Nikolaos & Loukas, Panagiotis & Karakolis, Panagiotis & Ioannou-Sougleridis, Vassilios & Normand, Pascal & Ntinas, Vasileios & Fyrigos, Iosif-Angelos & Karafyllidis, Ioannis & Sirakoulis,, 2021. "Multi-level resistance switching and random telegraph noise analysis of nitride based memristors," Chaos, Solitons & Fractals, Elsevier, vol. 153(P1).
    5. Stavrinides, Stavros G. & Hanias, Michael P. & Gonzalez, Mireia B. & Campabadal, Francesca & Contoyiannis, Yiannis & Potirakis, Stelios M. & Al Chawa, Mohamad Moner & de Benito, Carol & Tetzlaff, Rona, 2022. "On the chaotic nature of random telegraph noise in unipolar RRAM memristor devices," Chaos, Solitons & Fractals, Elsevier, vol. 160(C).
    Full references (including those not matched with items on IDEAS)

    Most related items

    These are the items that most often cite the same works as this one and are cited by the same works as this one.
    1. Guangdi Feng & Qiuxiang Zhu & Xuefeng Liu & Luqiu Chen & Xiaoming Zhao & Jianquan Liu & Shaobing Xiong & Kexiang Shan & Zhenzhong Yang & Qinye Bao & Fangyu Yue & Hui Peng & Rong Huang & Xiaodong Tang , 2024. "A ferroelectric fin diode for robust non-volatile memory," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    2. Ming Lv & Jiulong Wang & Ming Tian & Neng Wan & Wenyi Tong & Chungang Duan & Jiamin Xue, 2024. "Multiresistance states in ferro- and antiferroelectric trilayer boron nitride," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    3. Yueyang Jia & Qianqian Yang & Yue-Wen Fang & Yue Lu & Maosong Xie & Jianyong Wei & Jianjun Tian & Linxing Zhang & Rui Yang, 2024. "Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    4. Thanh Tung, Nguyen & Taxil, Gaspard & Nguyen, Hung Hoang & Ducharne, Benjamin & Lallart, Mickaël & Lefeuvre, Elie & Kuwano, Hiroki & Sebald, Gael, 2022. "Ultimate electromechanical energy conversion performance and energy storage capacity of ferroelectric materials under high excitation levels," Applied Energy, Elsevier, vol. 326(C).
    5. Jinhyoung Lee & Gunhoo Woo & Jinill Cho & Sihoon Son & Hyelim Shin & Hyunho Seok & Min-Jae Kim & Eungchul Kim & Ziyang Wang & Boseok Kang & Won-Jun Jang & Taesung Kim, 2024. "Free-standing two-dimensional ferro-ionic memristor," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    6. Martin F. Sarott & Marta D. Rossell & Manfred Fiebig & Morgan Trassin, 2022. "Multilevel polarization switching in ferroelectric thin films," Nature Communications, Nature, vol. 13(1), pages 1-7, December.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:eee:chsofr:v:183:y:2024:i:c:s0960077924004132. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    If CitEc recognized a bibliographic reference but did not link an item in RePEc to it, you can help with this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Thayer, Thomas R. (email available below). General contact details of provider: https://www.journals.elsevier.com/chaos-solitons-and-fractals .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.