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Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride

Author

Listed:
  • Fanrong Lin

    (Nanjing University of Aeronautics and Astronautics)

  • Xiaoyu Xuan

    (Nanjing University of Aeronautics and Astronautics)

  • Zhonghan Cao

    (Zhangjiang Laboratory)

  • Zhuhua Zhang

    (Nanjing University of Aeronautics and Astronautics)

  • Ying Liu

    (Nanjing University of Aeronautics and Astronautics)

  • Minmin Xue

    (Nanjing University of Aeronautics and Astronautics)

  • Yang Hang

    (Nanjing Tech University (Nanjing Tech))

  • Xin Liu

    (Nanjing University of Aeronautics and Astronautics)

  • Yizhou Zhao

    (Nanjing University of Aeronautics and Astronautics)

  • Libo Gao

    (Nanjing University)

  • Wanlin Guo

    (Nanjing University of Aeronautics and Astronautics)

  • Yanpeng Liu

    (Nanjing University of Aeronautics and Astronautics
    Nanjing University of Aeronautics and Astronautics)

Abstract

The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition. Here, we demonstrate robust room-temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride layers with a rhombohedral-like stacking (i.e., ABC-like stacking). The system exhibits an unconventional negative capacitance and record high electric polarization of 1.76 μC/cm2 among reported sliding ferroelectrics to date. The ferroelectricity also exists in similarly sandwiched bilayer and trilayer graphene, yet the polarization is slightly decreased with odd-even parity. Ab initio calculations suggest that the ferroelectricity is associated with a unique switchable co-sliding motion between graphene and adjacent boron nitride layer, in contrast to existing conventional vdW sliding ferroelectrics. As such, the ferroelectricity can sustain up to 325 K and remains intact after 50000 switching cycles in ~300000 s duration at 300 K. These results open a new opportunity to develop ultrathin memory devices based on rhombohedral-like heterostructures.

Suggested Citation

  • Fanrong Lin & Xiaoyu Xuan & Zhonghan Cao & Zhuhua Zhang & Ying Liu & Minmin Xue & Yang Hang & Xin Liu & Yizhou Zhao & Libo Gao & Wanlin Guo & Yanpeng Liu, 2025. "Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride," Nature Communications, Nature, vol. 16(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-56065-9
    DOI: 10.1038/s41467-025-56065-9
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