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Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires

Author

Listed:
  • Jinlei Zhang

    (Suzhou University of Science and Technology
    Suzhou University of Science and Technology
    Nanjing University)

  • Jiayong Zhang

    (Suzhou University of Science and Technology)

  • Yaping Qi

    (Macau University of Science and Technology
    Tohoku University)

  • Shuainan Gong

    (Suzhou University of Science and Technology)

  • Hang Xu

    (Suzhou University of Science and Technology)

  • Zhenqi Liu

    (Suzhou University of Science and Technology)

  • Ran Zhang

    (Suzhou University of Science and Technology)

  • Mohammad A. Sadi

    (Purdue University)

  • Demid Sychev

    (Purdue University)

  • Run Zhao

    (Suzhou University of Science and Technology)

  • Hongbin Yang

    (Suzhou University of Science and Technology)

  • Zhenping Wu

    (Beijing University of Posts and Telecommunications)

  • Dapeng Cui

    (University of Tennessee)

  • Lin Wang

    (Shanghai University)

  • Chunlan Ma

    (Suzhou University of Science and Technology)

  • Xiaoshan Wu

    (Suzhou University of Science and Technology)

  • Ju Gao

    (Suzhou University of Science and Technology
    Zaozhuang University)

  • Yong P. Chen

    (Tohoku University
    Purdue University
    Aarhus University)

  • Xinran Wang

    (Nanjing University
    Nanjing University
    Nanjing University
    Suzhou Laboratory)

  • Yucheng Jiang

    (Suzhou University of Science and Technology
    Suzhou University of Science and Technology)

Abstract

Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter. However, we report a room-temperature ferroelectricity in quasi-one-dimensional Te nanowires. Piezoelectric characteristics, ferroelectric loops and domain reversals are clearly observed. We attribute the ferroelectricity to the ion displacement created by the interlayer interaction between lone-pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, giving rise to a self-gated ferroelectric field-effect transistor. By utilizing ferroelectric Te nanowire as channel, the device exhibits high mobility (~220 cm2·V−1·s−1), continuous-variable resistive states can be observed with long-term retention (>105 s), fast speed ( 1.92 TB/cm2). Our work provides opportunities for single-element ferroelectrics and advances practical applications such as ultrahigh-density data storage and computing-in-memory devices.

Suggested Citation

  • Jinlei Zhang & Jiayong Zhang & Yaping Qi & Shuainan Gong & Hang Xu & Zhenqi Liu & Ran Zhang & Mohammad A. Sadi & Demid Sychev & Run Zhao & Hongbin Yang & Zhenping Wu & Dapeng Cui & Lin Wang & Chunlan , 2024. "Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-52062-6
    DOI: 10.1038/s41467-024-52062-6
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