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Atomic-level polarization reversal in sliding ferroelectric semiconductors

Author

Listed:
  • Fengrui Sui

    (East China Normal University)

  • Haoyang Li

    (East China Normal University)

  • Ruijuan Qi

    (East China Normal University
    Chinese Academy of Sciences)

  • Min Jin

    (Shanghai Dianji University)

  • Zhiwei Lv

    (East China Normal University)

  • Menghao Wu

    (Huazhong University of Science and Technology)

  • Xuechao Liu

    (Chinese Academy of Sciences)

  • Yufan Zheng

    (East China Normal University)

  • Beituo Liu

    (East China Normal University)

  • Rui Ge

    (East China Normal University)

  • Yu-Ning Wu

    (East China Normal University)

  • Rong Huang

    (East China Normal University)

  • Fangyu Yue

    (East China Normal University
    Shanxi University
    East China Normal University)

  • Junhao Chu

    (East China Normal University
    Shanghai Institute of Technical Physics)

  • Chungang Duan

    (East China Normal University
    Shanxi University
    East China Normal University)

Abstract

Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.

Suggested Citation

  • Fengrui Sui & Haoyang Li & Ruijuan Qi & Min Jin & Zhiwei Lv & Menghao Wu & Xuechao Liu & Yufan Zheng & Beituo Liu & Rui Ge & Yu-Ning Wu & Rong Huang & Fangyu Yue & Junhao Chu & Chungang Duan, 2024. "Atomic-level polarization reversal in sliding ferroelectric semiconductors," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48218-z
    DOI: 10.1038/s41467-024-48218-z
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    References listed on IDEAS

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    Cited by:

    1. Swarup Deb & Johannes Krause & Paulo E. Faria Junior & Michael Andreas Kempf & Rico Schwartz & Kenji Watanabe & Takashi Taniguchi & Jaroslav Fabian & Tobias Korn, 2024. "Excitonic signatures of ferroelectric order in parallel-stacked MoS2," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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