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Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability

Author

Listed:
  • Ruian Zhang

    (Zhejiang University)

  • Chen Lin

    (Zhejiang University
    Hangzhou Innovation Institute of Beihang University)

  • Hongliang Dong

    (Center for High Pressure Science and Technology Advanced Research)

  • Haojie Han

    (Tsinghua University)

  • Yu Song

    (Beijing Institute of Technology
    Beijing Institute of Technology)

  • Yiran Sun

    (Zhejiang University)

  • Yue Wang

    (Tsinghua University)

  • Zijun Zhang

    (Zhejiang University)

  • Xiaohe Miao

    (Westlake University)

  • Yongjun Wu

    (Zhejiang University)

  • Zhe Ren

    (Chinese Academy of Sciences)

  • Qiaoshi Zeng

    (Center for High Pressure Science and Technology Advanced Research
    Institute for Shanghai Advanced Research in Physical Sciences (SHARPS))

  • Houbing Huang

    (Beijing Institute of Technology
    Beijing Institute of Technology)

  • Jing Ma

    (Tsinghua University)

  • He Tian

    (Zhejiang University
    Zhejiang University)

  • Zhaohui Ren

    (Zhejiang University
    Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering)

  • Gaorong Han

    (Zhejiang University)

Abstract

The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZrxTi1−xO3 films with a continuous gradient of Zr concentration, realized by a competitive growth at ~220 °C. These intriguing films demonstrate a frequency-independent of dielectric permittivity below 100 kHz from room-temperature to 280 °C. In particular, the permittivity of the films can be largely regulated from 100 to 50 by slightly varying Zr compositional gradient. These results were revealed to arise from a built-in electric field within the films due to a coupling between the composition gradient and unidirectional spontaneous polarization. Our findings may pave a way to prepare compositionally-graded ferroelectric films by a solution approach, which is promising for practical dielectric, pyroelectric and photoelectric technical applications.

Suggested Citation

  • Ruian Zhang & Chen Lin & Hongliang Dong & Haojie Han & Yu Song & Yiran Sun & Yue Wang & Zijun Zhang & Xiaohe Miao & Yongjun Wu & Zhe Ren & Qiaoshi Zeng & Houbing Huang & Jing Ma & He Tian & Zhaohui Re, 2025. "Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability," Nature Communications, Nature, vol. 16(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-024-55411-7
    DOI: 10.1038/s41467-024-55411-7
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    References listed on IDEAS

    as
    1. Narayani Choudhury & Laura Walizer & Sergey Lisenkov & L. Bellaiche, 2011. "Geometric frustration in compositionally modulated ferroelectrics," Nature, Nature, vol. 470(7335), pages 513-517, February.
    2. Anoop R. Damodaran & Shishir Pandya & Yubo Qi & Shang-Lin Hsu & Shi Liu & Christopher Nelson & Arvind Dasgupta & Peter Ercius & Colin Ophus & Liv R. Dedon & Josh C. Agar & Hongling Lu & Jialan Zhang &, 2017. "Large polarization gradients and temperature-stable responses in compositionally-graded ferroelectrics," Nature Communications, Nature, vol. 8(1), pages 1-8, August.
    3. Yasuyoshi Saito & Hisaaki Takao & Toshihiko Tani & Tatsuhiko Nonoyama & Kazumasa Takatori & Takahiko Homma & Toshiatsu Nagaya & Masaya Nakamura, 2004. "Lead-free piezoceramics," Nature, Nature, vol. 432(7013), pages 84-87, November.
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