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Moiré-engineered light-matter interactions in MoS2/WSe2 heterobilayers at room temperature

Author

Listed:
  • Qiaoling Lin

    (Technical University of Denmark
    Technical University of Denmark
    Technical University of Denmark)

  • Hanlin Fang

    (Technical University of Denmark
    Technical University of Denmark
    Chalmers University of Technology)

  • Alexei Kalaboukhov

    (Chalmers University of Technology)

  • Yuanda Liu

    (Agency for Science Technology and Research (A*STAR))

  • Yi Zhang

    (Aalto University)

  • Moritz Fischer

    (Technical University of Denmark
    Technical University of Denmark
    Technical University of Denmark)

  • Juntao Li

    (Sun Yat-Sen University)

  • Joakim Hagel

    (Chalmers University of Technology)

  • Samuel Brem

    (Philipps-Universität Marburg)

  • Ermin Malic

    (Philipps-Universität Marburg)

  • Nicolas Stenger

    (Technical University of Denmark
    Technical University of Denmark
    Technical University of Denmark)

  • Zhipei Sun

    (Aalto University)

  • Martijn Wubs

    (Technical University of Denmark
    Technical University of Denmark
    Technical University of Denmark)

  • Sanshui Xiao

    (Technical University of Denmark
    Technical University of Denmark
    Technical University of Denmark)

Abstract

Moiré superlattices in van der Waals heterostructures represent a highly tunable quantum system, attracting substantial interest in both many-body physics and device applications. However, the influence of the moiré potential on light-matter interactions at room temperature has remained largely unexplored. In our study, we demonstrate that the moiré potential in MoS2/WSe2 heterobilayers facilitates the localization of interlayer exciton (IX) at room temperature. By performing reflection contrast spectroscopy, we demonstrate the importance of atomic reconstruction in modifying intralayer excitons, supported by the atomic force microscopy experiment. When decreasing the twist angle, we observe that the IX lifetime becomes longer and light emission gets enhanced, indicating that non-radiative decay channels such as defects are suppressed by the moiré potential. Moreover, through the integration of moiré superlattices with silicon single-mode cavities, we find that the devices employing moiré-trapped IXs exhibit a significantly lower threshold, one order of magnitude smaller compared to the device utilizing delocalized IXs. These findings not only encourage the exploration of many-body physics in moiré superlattices at elevated temperatures but also pave the way for leveraging these artificial quantum materials in photonic and optoelectronic applications.

Suggested Citation

  • Qiaoling Lin & Hanlin Fang & Alexei Kalaboukhov & Yuanda Liu & Yi Zhang & Moritz Fischer & Juntao Li & Joakim Hagel & Samuel Brem & Ermin Malic & Nicolas Stenger & Zhipei Sun & Martijn Wubs & Sanshui , 2024. "Moiré-engineered light-matter interactions in MoS2/WSe2 heterobilayers at room temperature," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-53083-x
    DOI: 10.1038/s41467-024-53083-x
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