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Ferroelectric tunnel junctions for information storage and processing

Author

Listed:
  • Vincent Garcia

    (Unité Mixte de Physique CNRS/Thales, 1 avenue Fresnel
    Université Paris-Sud)

  • Manuel Bibes

    (Unité Mixte de Physique CNRS/Thales, 1 avenue Fresnel
    Université Paris-Sud)

Abstract

Computer memory based on ferroelectric polarization is a promising alternative to technologies based, for example, on magnetism. Here, Garcia and Bibes review how ferroelectric tunnel junctions, where ferroelectric polarization controls electrical resistance, could improve the performance of these devices.

Suggested Citation

  • Vincent Garcia & Manuel Bibes, 2014. "Ferroelectric tunnel junctions for information storage and processing," Nature Communications, Nature, vol. 5(1), pages 1-12, September.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5289
    DOI: 10.1038/ncomms5289
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    Cited by:

    1. Thanh Tung, Nguyen & Taxil, Gaspard & Nguyen, Hung Hoang & Ducharne, Benjamin & Lallart, Mickaël & Lefeuvre, Elie & Kuwano, Hiroki & Sebald, Gael, 2022. "Ultimate electromechanical energy conversion performance and energy storage capacity of ferroelectric materials under high excitation levels," Applied Energy, Elsevier, vol. 326(C).
    2. Guangdi Feng & Qiuxiang Zhu & Xuefeng Liu & Luqiu Chen & Xiaoming Zhao & Jianquan Liu & Shaobing Xiong & Kexiang Shan & Zhenzhong Yang & Qinye Bao & Fangyu Yue & Hui Peng & Rong Huang & Xiaodong Tang , 2024. "A ferroelectric fin diode for robust non-volatile memory," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    3. Koo, Ryun-Han & Shin, Wonjun & Jung, Gyuweon & Kwon, Dongseok & Kim, Jae-Joon & Kwon, Daewoong & Lee, Jong-Ho, 2024. "Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity," Chaos, Solitons & Fractals, Elsevier, vol. 183(C).
    4. Ming Lv & Jiulong Wang & Ming Tian & Neng Wan & Wenyi Tong & Chungang Duan & Jiamin Xue, 2024. "Multiresistance states in ferro- and antiferroelectric trilayer boron nitride," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    5. Jinhyoung Lee & Gunhoo Woo & Jinill Cho & Sihoon Son & Hyelim Shin & Hyunho Seok & Min-Jae Kim & Eungchul Kim & Ziyang Wang & Boseok Kang & Won-Jun Jang & Taesung Kim, 2024. "Free-standing two-dimensional ferro-ionic memristor," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    6. Yueyang Jia & Qianqian Yang & Yue-Wen Fang & Yue Lu & Maosong Xie & Jianyong Wei & Jianjun Tian & Linxing Zhang & Rui Yang, 2024. "Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    7. Martin F. Sarott & Marta D. Rossell & Manfred Fiebig & Morgan Trassin, 2022. "Multilevel polarization switching in ferroelectric thin films," Nature Communications, Nature, vol. 13(1), pages 1-7, December.

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