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Remote epitaxy of single-crystal rhombohedral WS2 bilayers

Author

Listed:
  • Chao Chang

    (South China Normal University
    South China Normal University)

  • Xiaowen Zhang

    (South China Normal University
    South China Normal University)

  • Weixuan Li

    (South China Normal University
    South China Normal University)

  • Quanlin Guo

    (Peking University)

  • Zuo Feng

    (Peking University)

  • Chen Huang

    (Peking University)

  • Yunlong Ren

    (South China Normal University
    South China Normal University
    Chinese Academy of Sciences)

  • Yingying Cai

    (South China Normal University
    South China Normal University)

  • Xu Zhou

    (South China Normal University
    South China Normal University)

  • Jinhuan Wang

    (South China Normal University
    South China Normal University)

  • Zhilie Tang

    (South China Normal University
    South China Normal University)

  • Feng Ding

    (Chinese Academy of Sciences)

  • Wenya Wei

    (South China Normal University
    South China Normal University)

  • Kaihui Liu

    (Peking University
    Chinese Academy of Sciences
    Peking University)

  • Xiaozhi Xu

    (South China Normal University
    South China Normal University)

Abstract

Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS2 bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaking in a-plane sapphire, where the influence of atomic steps passes through the lower TMD layer and controls the R-stacking of the upper layer. The as-grown R-stacked bilayers show up-to-30-fold enhancements in carrier mobility (34 cm2V−1s−1), nearly doubled circular helicity (61%) and interfacial ferroelectricity, in contrast to monolayer films. Our work reveals a growth mechanism to obtain stacking-controlled bilayer TMD single crystals, and promotes large-scale applications of R-stacked TMD.

Suggested Citation

  • Chao Chang & Xiaowen Zhang & Weixuan Li & Quanlin Guo & Zuo Feng & Chen Huang & Yunlong Ren & Yingying Cai & Xu Zhou & Jinhuan Wang & Zhilie Tang & Feng Ding & Wenya Wei & Kaihui Liu & Xiaozhi Xu, 2024. "Remote epitaxy of single-crystal rhombohedral WS2 bilayers," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48522-8
    DOI: 10.1038/s41467-024-48522-8
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    References listed on IDEAS

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