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Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides

Author

Listed:
  • Peiming Zheng

    (South China Normal University
    South China Normal University)

  • Wenya Wei

    (South China Normal University
    South China Normal University)

  • Zhihua Liang

    (South China Normal University
    South China Normal University)

  • Biao Qin

    (Peking University)

  • Jinpeng Tian

    (Chinese Academy of Sciences)

  • Jinhuan Wang

    (Peking University)

  • Ruixi Qiao

    (Peking University)

  • Yunlong Ren

    (South China Normal University
    South China Normal University)

  • Junting Chen

    (South China Normal University
    South China Normal University)

  • Chen Huang

    (Peking University)

  • Xu Zhou

    (South China Normal University
    South China Normal University)

  • Guangyu Zhang

    (Chinese Academy of Sciences
    Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences)

  • Zhilie Tang

    (South China Normal University
    South China Normal University)

  • Dapeng Yu

    (Southern University of Science and Technology)

  • Feng Ding

    (Chinese Academy of Sciences)

  • Kaihui Liu

    (Peking University
    Peking University
    Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences)

  • Xiaozhi Xu

    (South China Normal University
    South China Normal University)

Abstract

The great challenge for the growth of non-centrosymmetric 2D single crystals is to break the equivalence of antiparallel grains. Even though this pursuit has been partially achieved in boron nitride and transition metal dichalcogenides (TMDs) growth, the key factors that determine the epitaxy of non-centrosymmetric 2D single crystals are still unclear. Here we report a universal methodology for the epitaxy of non-centrosymmetric 2D metal dichalcogenides enabled by accurate time sequence control of the simultaneous formation of grain nuclei and substrate steps. With this methodology, we have demonstrated the epitaxy of unidirectionally aligned MoS2 grains on a, c, m, n, r and v plane Al2O3 as well as MgO and TiO2 substrates. This approach is also applicable to many TMDs, such as WS2, NbS2, MoSe2, WSe2 and NbSe2. This study reveals a robust mechanism for the growth of various 2D single crystals and thus paves the way for their potential applications.

Suggested Citation

  • Peiming Zheng & Wenya Wei & Zhihua Liang & Biao Qin & Jinpeng Tian & Jinhuan Wang & Ruixi Qiao & Yunlong Ren & Junting Chen & Chen Huang & Xu Zhou & Guangyu Zhang & Zhilie Tang & Dapeng Yu & Feng Ding, 2023. "Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-36286-6
    DOI: 10.1038/s41467-023-36286-6
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    References listed on IDEAS

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    1. Li Wang & Xiaozhi Xu & Leining Zhang & Ruixi Qiao & Muhong Wu & Zhichang Wang & Shuai Zhang & Jing Liang & Zhihong Zhang & Zhibin Zhang & Wang Chen & Xuedong Xie & Junyu Zong & Yuwei Shan & Yi Guo & M, 2019. "Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper," Nature, Nature, vol. 570(7759), pages 91-95, June.
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    Cited by:

    1. Chao Chang & Xiaowen Zhang & Weixuan Li & Quanlin Guo & Zuo Feng & Chen Huang & Yunlong Ren & Yingying Cai & Xu Zhou & Jinhuan Wang & Zhilie Tang & Feng Ding & Wenya Wei & Kaihui Liu & Xiaozhi Xu, 2024. "Remote epitaxy of single-crystal rhombohedral WS2 bilayers," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    2. Lu Li & Qinqin Wang & Fanfan Wu & Qiaoling Xu & Jinpeng Tian & Zhiheng Huang & Qinghe Wang & Xuan Zhao & Qinghua Zhang & Qinkai Fan & Xiuzhen Li & Yalin Peng & Yangkun Zhang & Kunshan Ji & Aomiao Zhi , 2024. "Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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