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Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Author

Listed:
  • Xiumei Zhang

    (Jiangnan University
    Jiangnan University)

  • Haiyan Nan

    (Jiangnan University)

  • Shaoqing Xiao

    (Jiangnan University)

  • Xi Wan

    (Jiangnan University)

  • Xiaofeng Gu

    (Jiangnan University)

  • Aijun Du

    (Queensland University of Technology)

  • Zhenhua Ni

    (Southeast University)

  • Kostya (Ken) Ostrikov

    (Queensland University of Technology
    Commonwealth Scientific and Industrial Research Organization)

Abstract

Epitaxial growth of atomically thin two-dimensional crystals such as transition metal dichalcogenides remains challenging, especially for producing large-size transition metal dichalcogenides bilayer crystals featuring high density of states, carrier mobility and stability at room temperature. Here we achieve in epitaxial growth of the second monolayer from the first monolayer by reverse-flow chemical vapor epitaxy and produce high-quality, large-size transition metal dichalcogenides bilayer crystals with high yield, control, and reliability. Customized temperature profiles and reverse gas flow help activate the first layer without introducing new nucleation centers leading to near-defect-free epitaxial growth of the second layer from the existing nucleation centers. A series of bilayer crystals including MoS2 and WS2, ternary Mo1−xWxS2 and quaternary Mo1−xWxS2(1−y)Se2y are synthesized with variable structural configurations and tunable electronic and optical properties. The robust, potentially universal approach for the synthesis of large-size transition metal dichalcogenides bilayer single crystals is highly-promising for fundamental studies and technological applications.

Suggested Citation

  • Xiumei Zhang & Haiyan Nan & Shaoqing Xiao & Xi Wan & Xiaofeng Gu & Aijun Du & Zhenhua Ni & Kostya (Ken) Ostrikov, 2019. "Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy," Nature Communications, Nature, vol. 10(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-08468-8
    DOI: 10.1038/s41467-019-08468-8
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    Cited by:

    1. Manzhang Xu & Hongjia Ji & Lu Zheng & Weiwei Li & Jing Wang & Hanxin Wang & Lei Luo & Qianbo Lu & Xuetao Gan & Zheng Liu & Xuewen Wang & Wei Huang, 2024. "Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles," Nature Communications, Nature, vol. 15(1), pages 1-12, December.
    2. Chao Chang & Xiaowen Zhang & Weixuan Li & Quanlin Guo & Zuo Feng & Chen Huang & Yunlong Ren & Yingying Cai & Xu Zhou & Jinhuan Wang & Zhilie Tang & Feng Ding & Wenya Wei & Kaihui Liu & Xiaozhi Xu, 2024. "Remote epitaxy of single-crystal rhombohedral WS2 bilayers," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    3. Teng Ma & Hao Chen & Kunihiro Yananose & Xin Zhou & Lin Wang & Runlai Li & Ziyu Zhu & Zhenyue Wu & Qing-Hua Xu & Jaejun Yu & Cheng Wei Qiu & Alessandro Stroppa & Kian Ping Loh, 2022. "Growth of bilayer MoTe2 single crystals with strong non-linear Hall effect," Nature Communications, Nature, vol. 13(1), pages 1-10, December.

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