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Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium

Author

Listed:
  • Bin Cheng

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Yang Gao

    (University of Science and Technology of China
    University of Science and Technology of China)

  • Zhi Zheng

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Shuhang Chen

    (University of Science and Technology of China)

  • Zheng Liu

    (University of Science and Technology of China)

  • Ling Zhang

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Qi Zhu

    (University of Science and Technology of China)

  • Hui Li

    (Anhui University)

  • Lin Li

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Changgan Zeng

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

Abstract

The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices.

Suggested Citation

  • Bin Cheng & Yang Gao & Zhi Zheng & Shuhang Chen & Zheng Liu & Ling Zhang & Qi Zhu & Hui Li & Lin Li & Changgan Zeng, 2024. "Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-49706-y
    DOI: 10.1038/s41467-024-49706-y
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    References listed on IDEAS

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