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Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

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Listed:
  • Zhongqiang Chen

    (Nanjing University)

  • Hongsong Qiu

    (Nanjing University)

  • Xinjuan Cheng

    (Nanjing University of Science and Technology)

  • Jizhe Cui

    (Tsinghua University)

  • Zuanming Jin

    (University of Shanghai for Science and Technology)

  • Da Tian

    (Nanjing University)

  • Xu Zhang

    (Nanjing University)

  • Kankan Xu

    (Nanjing University)

  • Ruxin Liu

    (Nanjing University)

  • Wei Niu

    (Nanjing University)

  • Liqi Zhou

    (Nanjing University)

  • Tianyu Qiu

    (Nanjing University)

  • Yequan Chen

    (Nanjing University)

  • Caihong Zhang

    (Nanjing University)

  • Xiaoxiang Xi

    (Nanjing University)

  • Fengqi Song

    (Nanjing University)

  • Rong Yu

    (Tsinghua University)

  • Xuechao Zhai

    (Nanjing University of Science and Technology)

  • Biaobing Jin

    (Nanjing University
    Purple Mountain Laboratories)

  • Rong Zhang

    (Nanjing University
    Xiamen University)

  • Xuefeng Wang

    (Nanjing University)

Abstract

Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.

Suggested Citation

  • Zhongqiang Chen & Hongsong Qiu & Xinjuan Cheng & Jizhe Cui & Zuanming Jin & Da Tian & Xu Zhang & Kankan Xu & Ruxin Liu & Wei Niu & Liqi Zhou & Tianyu Qiu & Yequan Chen & Caihong Zhang & Xiaoxiang Xi &, 2024. "Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46821-8
    DOI: 10.1038/s41467-024-46821-8
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