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Cryogenic multiplexing using selective area grown nanowires

Author

Listed:
  • Dāgs Olšteins

    (University of Copenhagen
    Technical University of Denmark)

  • Gunjan Nagda

    (University of Copenhagen)

  • Damon J. Carrad

    (Technical University of Denmark)

  • Daria V. Beznasyuk

    (Technical University of Denmark)

  • Christian E. N. Petersen

    (Technical University of Denmark)

  • Sara Martí-Sánchez

    (CSIC and BIST)

  • Jordi Arbiol

    (CSIC and BIST
    ICREA)

  • Thomas S. Jespersen

    (University of Copenhagen
    Technical University of Denmark)

Abstract

Bottom-up grown nanomaterials play an integral role in the development of quantum technologies but are often challenging to characterise on large scales. Here, we harness selective area growth of semiconductor nanowires to demonstrate large-scale integrated circuits and characterisation of large numbers of quantum devices. The circuit consisted of 512 quantum devices embedded within multiplexer/demultiplexer pairs, incorporating thousands of interconnected selective area growth nanowires operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increasing the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future selective area growth quantum circuits. More broadly, the ability to systematically characterise large numbers of devices provides new levels of statistical certainty to materials/device development.

Suggested Citation

  • Dāgs Olšteins & Gunjan Nagda & Damon J. Carrad & Daria V. Beznasyuk & Christian E. N. Petersen & Sara Martí-Sánchez & Jordi Arbiol & Thomas S. Jespersen, 2023. "Cryogenic multiplexing using selective area grown nanowires," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-43551-1
    DOI: 10.1038/s41467-023-43551-1
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    References listed on IDEAS

    as
    1. Katsuhiro Tomioka & Masatoshi Yoshimura & Takashi Fukui, 2012. "A III–V nanowire channel on silicon for high-performance vertical transistors," Nature, Nature, vol. 488(7410), pages 189-192, August.
    2. H. Moon & D. T. Lennon & J. Kirkpatrick & N. M. Esbroeck & L. C. Camenzind & Liuqi Yu & F. Vigneau & D. M. Zumbühl & G. A. D. Briggs & M. A. Osborne & D. Sejdinovic & E. A. Laird & N. Ares, 2020. "Machine learning enables completely automatic tuning of a quantum device faster than human experts," Nature Communications, Nature, vol. 11(1), pages 1-10, December.
    3. L. Hofstetter & S. Csonka & J. Nygård & C. Schönenberger, 2009. "Cooper pair splitter realized in a two-quantum-dot Y-junction," Nature, Nature, vol. 461(7266), pages 960-963, October.
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