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A III–V nanowire channel on silicon for high-performance vertical transistors

Author

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  • Katsuhiro Tomioka

    (Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628, Japan
    Japan Science and Technology Agency—PRESTO, Kawaguchi, Saitama 332-0012, Japan)

  • Masatoshi Yoshimura

    (Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628, Japan)

  • Takashi Fukui

    (Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628, Japan)

Abstract

The fabrication of transistors using vertical, six-sided core–multishell indium gallium arsenide nanowires with an all-surrounding gate on a silicon substrate combines the advantages of a three-dimensional gate architecture with the high electron mobility of the III–V nanowires, drastically enhancing the on-state current and transconductance.

Suggested Citation

  • Katsuhiro Tomioka & Masatoshi Yoshimura & Takashi Fukui, 2012. "A III–V nanowire channel on silicon for high-performance vertical transistors," Nature, Nature, vol. 488(7410), pages 189-192, August.
    • Handle: RePEc:nat:nature:v:488:y:2012:i:7410:d:10.1038_nature11293
    DOI: 10.1038/nature11293
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    Cited by:

    1. Dāgs Olšteins & Gunjan Nagda & Damon J. Carrad & Daria V. Beznasyuk & Christian E. N. Petersen & Sara Martí-Sánchez & Jordi Arbiol & Thomas S. Jespersen, 2023. "Cryogenic multiplexing using selective area grown nanowires," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    2. Yiwen Zhang & Baoming Wang & Changxu Miao & Haozhi Chai & Wei Hong & Frances M. Ross & Rui-Tao Wen, 2024. "Controlled formation of three-dimensional cavities during lateral epitaxial growth," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    3. Pengyan Wen & Preksha Tiwari & Svenja Mauthe & Heinz Schmid & Marilyne Sousa & Markus Scherrer & Michael Baumann & Bertold Ian Bitachon & Juerg Leuthold & Bernd Gotsmann & Kirsten E. Moselund, 2022. "Waveguide coupled III-V photodiodes monolithically integrated on Si," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    4. Leila Balaghi & Si Shan & Ivan Fotev & Finn Moebus & Rakesh Rana & Tommaso Venanzi & René Hübner & Thomas Mikolajick & Harald Schneider & Manfred Helm & Alexej Pashkin & Emmanouil Dimakis, 2021. "High electron mobility in strained GaAs nanowires," Nature Communications, Nature, vol. 12(1), pages 1-11, December.
    5. Sung Bum Kang & Rahul Sharma & Minhyeok Jo & Su In Kim & Jeongwoo Hwang & Sang Hyuk Won & Jae Cheol Shin & Kyoung Jin Choi, 2022. "Catalysis-Free Growth of III-V Core-Shell Nanowires on p -Si for Efficient Heterojunction Solar Cells with Optimized Window Layer," Energies, MDPI, vol. 15(5), pages 1-10, February.

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