IDEAS home Printed from https://ideas.repec.org/a/gam/jeners/v14y2021i12p3477-d573509.html
   My bibliography  Save this article

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

Author

Listed:
  • Chih-Chiang Wu

    (Mechanical and Mechatronics Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan)

  • Ching-Yao Liu

    (Department of Mechanical Engineering, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)

  • Guo-Bin Wang

    (Department of Mechanical Engineering, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)

  • Yueh-Tsung Shieh

    (Department of Mechanical Engineering, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)

  • Wei-Hua Chieng

    (Department of Mechanical Engineering, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)

  • Edward Yi Chang

    (Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)

Abstract

This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A.

Suggested Citation

  • Chih-Chiang Wu & Ching-Yao Liu & Guo-Bin Wang & Yueh-Tsung Shieh & Wei-Hua Chieng & Edward Yi Chang, 2021. "A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization," Energies, MDPI, vol. 14(12), pages 1-23, June.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:12:p:3477-:d:573509
    as

    Download full text from publisher

    File URL: https://www.mdpi.com/1996-1073/14/12/3477/pdf
    Download Restriction: no
    File URL: https://www.mdpi.com/1996-1073/14/12/3477/
    Download Restriction: no
    ---><---

    References listed on IDEAS

    as
    1. Surya Elangovan & Stone Cheng & Edward Yi Chang, 2020. "Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications," Energies, MDPI, vol. 13(10), pages 1-11, May.
    2. Ching-Yao Liu & Guo-Bin Wang & Chih-Chiang Wu & Edward Yi Chang & Stone Cheng & Wei-Hua Chieng, 2021. "Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier," Energies, MDPI, vol. 14(3), pages 1-22, January.
    3. You-Chen Weng & Chih-Chiang Wu & Edward Yi Chang & Wei-Hua Chieng, 2021. "Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor," Energies, MDPI, vol. 14(8), pages 1-16, April.
    4. Mauricio Dalla Vecchia & Simon Ravyts & Giel Van den Broeck & Johan Driesen, 2019. "Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview," Energies, MDPI, vol. 12(14), pages 1-20, July.
    5. Po-Chien Chou & Szu-Hao Chen & Ting-En Hsieh & Stone Cheng & Jesús A. Del Alamo & Edward Yi Chang, 2017. "Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications," Energies, MDPI, vol. 10(2), pages 1-12, February.
    Full references (including those not matched with items on IDEAS)

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Chih-Chiang Wu & Ching-Yao Liu & Sandeep Anand & Wei-Hua Chieng & Edward-Yi Chang & Arnab Sarkar, 2021. "Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter," Energies, MDPI, vol. 14(18), pages 1-26, September.
    2. Yueh-Tsung Shieh & Ching-Yao Liu & Chih-Chiang Wu & Wei-Hua Chieng & Edward-Yi Chang, 2022. "Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier," Energies, MDPI, vol. 15(9), pages 1-21, April.
    3. Ching-Yao Liu & Chih-Chiang Wu & Li-Chuan Tang & Yueh-Tsung Shieh & Wei-Hua Chieng & Edward-Yi Chang, 2023. "Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT," Energies, MDPI, vol. 16(9), pages 1-21, April.

    Most related items

    These are the items that most often cite the same works as this one and are cited by the same works as this one.
    1. Rustam Kumar & Chih-Chiang Wu & Ching-Yao Liu & Yu-Lin Hsiao & Wei-Hua Chieng & Edward-Yi Chang, 2021. "Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter," Energies, MDPI, vol. 14(18), pages 1-23, September.
    2. Ching-Yao Liu & Chih-Chiang Wu & Li-Chuan Tang & Yueh-Tsung Shieh & Wei-Hua Chieng & Edward-Yi Chang, 2023. "Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT," Energies, MDPI, vol. 16(9), pages 1-21, April.
    3. Li-Chuan Tang & Shyr-Long Jeng & Edward-Yi Chang & Wei-Hua Chieng, 2021. "Variable-Frequency Pulse Width Modulation Circuits for Resonant Wireless Power Transfer," Energies, MDPI, vol. 14(12), pages 1-25, June.
    4. Yueh-Tsung Shieh & Ching-Yao Liu & Chih-Chiang Wu & Wei-Hua Chieng & Edward-Yi Chang, 2022. "Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier," Energies, MDPI, vol. 15(9), pages 1-21, April.
    5. Fei Lu & Chong Zhu, 2022. "Advanced Wireless Power Transfer Technologies," Energies, MDPI, vol. 15(9), pages 1-2, April.
    6. Baochao Wang & Shili Dong & Shanlin Jiang & Chun He & Jianhui Hu & Hui Ye & Xuezhen Ding, 2019. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs," Energies, MDPI, vol. 12(6), pages 1-13, March.
    7. You-Chen Weng & Chih-Chiang Wu & Edward Yi Chang & Wei-Hua Chieng, 2021. "Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor," Energies, MDPI, vol. 14(8), pages 1-16, April.
    8. Zbigniew Waradzyn & Robert Stala & Andrzej Mondzik & Aleksander Skała & Adam Penczek, 2020. "GaN-Based DC-DC Resonant Boost Converter with Very High Efficiency and Voltage Gain Control," Energies, MDPI, vol. 13(23), pages 1-21, December.
    9. Desheng Zhang & Run Min & Zhigang Liu & Qiaoling Tong & Qiao Zhang & Ting Wu & Ming Zhang & Aosong Zhou, 2022. "Reducing Circling Currents in a VHF Class Φ 2 Inverter Based on a Fully Analytical Loss Model," Energies, MDPI, vol. 15(22), pages 1-17, November.
    10. Yumeng Lan & Masafumi Miyatake, 2022. "An Attended-Free, All-in-One-Go, Automatic Analysis Assistant Software for E-liked Shape Contactless Inductive Power Transfer Device," Energies, MDPI, vol. 15(17), pages 1-23, August.
    11. Chih-Chiang Wu & Ching-Yao Liu & Sandeep Anand & Wei-Hua Chieng & Edward-Yi Chang & Arnab Sarkar, 2021. "Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter," Energies, MDPI, vol. 14(18), pages 1-26, September.
    12. Surya Elangovan & Edward Yi Chang & Stone Cheng, 2021. "Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress," Energies, MDPI, vol. 14(8), pages 1-11, April.
    13. Yueh-Tsung Shieh & Chih-Chiang Wu & Shyr-Long Jeng & Ching-Yao Liu & Shiang-Yu Hsieh & Chi-Chun Haung & Wen-Yuh Shieh & Wei-Hua Chieng & Edward-Yi Chang, 2023. "A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT," Energies, MDPI, vol. 16(16), pages 1-28, August.
    14. Olcay Bay & Manh Tuan Tran & Mohamed El Baghdadi & Sajib Chakraborty & Omar Hegazy, 2023. "A Comprehensive Review of GaN-Based Bi-directional On-Board Charger Topologies and Modulation Methods," Energies, MDPI, vol. 16(8), pages 1-45, April.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:gam:jeners:v:14:y:2021:i:12:p:3477-:d:573509. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    If CitEc recognized a bibliographic reference but did not link an item in RePEc to it, you can help with this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: MDPI Indexing Manager (email available below). General contact details of provider: https://www.mdpi.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.