Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress
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- Surya Elangovan & Stone Cheng & Edward Yi Chang, 2020. "Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications," Energies, MDPI, vol. 13(10), pages 1-11, May.
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Keywords
enhancement-mode GaN power device; p-GaN; high electron mobility transistor (HEMT); negative gate bias stress; p-GaN; electron traps;All these keywords.
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