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Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

Author

Listed:
  • Mauricio Dalla Vecchia

    (Departement Elektrotechniek, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
    EnergyVille, Thor Park 8310, 3600 Genk, Belgium)

  • Simon Ravyts

    (Departement Elektrotechniek, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
    EnergyVille, Thor Park 8310, 3600 Genk, Belgium)

  • Giel Van den Broeck

    (Departement Elektrotechniek, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
    EnergyVille, Thor Park 8310, 3600 Genk, Belgium)

  • Johan Driesen

    (Departement Elektrotechniek, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
    EnergyVille, Thor Park 8310, 3600 Genk, Belgium)

Abstract

This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational switching frequency, challenges related to the circuit design procedure, passive component selection, thermal management, and experimental testing are currently faced by power electronics engineers. Therefore, the focus of this paper is on low-voltage (<650 V) devices that are used to assemble DC-DC and/or DC-AC converters to, for instance, interconnect PV generation systems in the DC and/or AC grids. The current subjects will be discussed herein: GaN device structure, the advantages and disadvantages of each lateral gallium nitride technology available, design challenges related to electrical layout and thermal management, overvoltages and its implications in the driver signal, and finally, a comprehensive comparison between GaN and Si technology considering the main parameters to increase the converters efficiency.

Suggested Citation

  • Mauricio Dalla Vecchia & Simon Ravyts & Giel Van den Broeck & Johan Driesen, 2019. "Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview," Energies, MDPI, vol. 12(14), pages 1-20, July.
    • Handle: RePEc:gam:jeners:v:12:y:2019:i:14:p:2663-:d:247556
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    Citations

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    Cited by:

    1. Zbigniew Waradzyn & Robert Stala & Andrzej Mondzik & Aleksander Skała & Adam Penczek, 2020. "GaN-Based DC-DC Resonant Boost Converter with Very High Efficiency and Voltage Gain Control," Energies, MDPI, vol. 13(23), pages 1-21, December.
    2. Chih-Chiang Wu & Ching-Yao Liu & Guo-Bin Wang & Yueh-Tsung Shieh & Wei-Hua Chieng & Edward Yi Chang, 2021. "A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization," Energies, MDPI, vol. 14(12), pages 1-23, June.
    3. Olcay Bay & Manh Tuan Tran & Mohamed El Baghdadi & Sajib Chakraborty & Omar Hegazy, 2023. "A Comprehensive Review of GaN-Based Bi-directional On-Board Charger Topologies and Modulation Methods," Energies, MDPI, vol. 16(8), pages 1-45, April.

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