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A Comprehensive Review of GaN-Based Bi-directional On-Board Charger Topologies and Modulation Methods

Author

Listed:
  • Olcay Bay

    (MOBI-EPOWERS Research Group, ETEC Department, Vrije Universiteit Brussel (VUB), Pleinlaan 2, 1050 Brussels, Belgium
    Flanders Make, Gaston Geenslaan 8, 3001 Heverlee, Belgium)

  • Manh Tuan Tran

    (MOBI-EPOWERS Research Group, ETEC Department, Vrije Universiteit Brussel (VUB), Pleinlaan 2, 1050 Brussels, Belgium
    Flanders Make, Gaston Geenslaan 8, 3001 Heverlee, Belgium)

  • Mohamed El Baghdadi

    (MOBI-EPOWERS Research Group, ETEC Department, Vrije Universiteit Brussel (VUB), Pleinlaan 2, 1050 Brussels, Belgium
    Flanders Make, Gaston Geenslaan 8, 3001 Heverlee, Belgium)

  • Sajib Chakraborty

    (MOBI-EPOWERS Research Group, ETEC Department, Vrije Universiteit Brussel (VUB), Pleinlaan 2, 1050 Brussels, Belgium)

  • Omar Hegazy

    (MOBI-EPOWERS Research Group, ETEC Department, Vrije Universiteit Brussel (VUB), Pleinlaan 2, 1050 Brussels, Belgium
    Flanders Make, Gaston Geenslaan 8, 3001 Heverlee, Belgium)

Abstract

The wide-scale adoption and accelerated growth of electric vehicle (EV) use and increasing demand for faster charging necessitate the research and development of power electronic converters to achieve high-power, compact, and reliable EV charging solutions. Although the fast charging concept is often associated with off-board DC chargers, the importance of on-board AC fast charging is undeniable with the increasing battery capacities. This article comprehensively reviews gallium nitride (GaN) semiconductor-based bidirectional on-board charger (OBC) topologies used in both 400 V and 800 V EV applications. Moreover, comparative evaluations of GaN-based bi-directional OBC topologies regarding power conversion losses (conduction loss and soft switching capabilities), power density, implementation considerations, power quality, electromagnetic interference, and reliability aspects have been presented. The status of commercially available GaN power modules, advancements in GaN technology, applicable industry standards, and application requirements for OBCs have been also included in this study. Finally, in light of forthcoming advancements in GaN power transistor technology, this study highlights potential areas of research related to the reviewed topologies. Such research can aid researchers and designers in improving the performance and user experience of electric vehicles, ultimately supporting the widespread adoption of EVs.

Suggested Citation

  • Olcay Bay & Manh Tuan Tran & Mohamed El Baghdadi & Sajib Chakraborty & Omar Hegazy, 2023. "A Comprehensive Review of GaN-Based Bi-directional On-Board Charger Topologies and Modulation Methods," Energies, MDPI, vol. 16(8), pages 1-45, April.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:8:p:3433-:d:1123028
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    References listed on IDEAS

    as
    1. Mihai Rata & Gabriela Rata & Constantin Filote & Maria Simona Raboaca & Adrian Graur & Ciprian Afanasov & Andreea-Raluca Felseghi, 2019. "The ElectricalVehicle Simulator for Charging Station in Mode 3 of IEC 61851-1 Standard," Energies, MDPI, vol. 13(1), pages 1-10, December.
    2. Shahid Jaman & Sajib Chakraborty & Dai-Duong Tran & Thomas Geury & Mohamed El Baghdadi & Omar Hegazy, 2022. "Review on Integrated On-Board Charger-Traction Systems: V2G Topologies, Control Approaches, Standards and Power Density State-of-the-Art for Electric Vehicle," Energies, MDPI, vol. 15(15), pages 1-38, July.
    3. Mauricio Dalla Vecchia & Simon Ravyts & Giel Van den Broeck & Johan Driesen, 2019. "Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview," Energies, MDPI, vol. 12(14), pages 1-20, July.
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