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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Author

Listed:
  • Gwen Rolland

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Christophe Rodriguez

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Guillaume Gommé

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Abderrahim Boucherif

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Ahmed Chakroun

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Meriem Bouchilaoun

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Marie Clara Pepin

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Faissal El Hamidi

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Soundos Maher

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Richard Arès

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

  • Tom MacElwee

    (GaNSystems Inc., 1145 Innovation, Ottawa, ON K2K 3G8, Canada)

  • Hassan Maher

    (Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada)

Abstract

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm −3 p doping, a V th of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

Suggested Citation

  • Gwen Rolland & Christophe Rodriguez & Guillaume Gommé & Abderrahim Boucherif & Ahmed Chakroun & Meriem Bouchilaoun & Marie Clara Pepin & Faissal El Hamidi & Soundos Maher & Richard Arès & Tom MacElwee, 2021. "High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN," Energies, MDPI, vol. 14(19), pages 1-9, September.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:19:p:6098-:d:642490
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    References listed on IDEAS

    as
    1. Matteo Meneghini & Oliver Hilt & Joachim Wuerfl & Gaudenzio Meneghesso, 2017. "Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate," Energies, MDPI, vol. 10(2), pages 1-15, January.
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    More about this item

    Keywords

    HEMT; normally-OFF; P-GaN; CBE;
    All these keywords.

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