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Giant tunnel electroresistance for non-destructive readout of ferroelectric states

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  • V. Garcia

    (Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l’Ecole Polytechnique, 91767 Palaiseau, France, and Université Paris-Sud
    University of Cambridge)

  • S. Fusil

    (Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l’Ecole Polytechnique, 91767 Palaiseau, France, and Université Paris-Sud
    Université d’Evry-Val d'Essonne, Bd. F. Mitterrand, 91025 Evry cedex, France)

  • K. Bouzehouane

    (Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l’Ecole Polytechnique, 91767 Palaiseau, France, and Université Paris-Sud)

  • S. Enouz-Vedrenne

    (Thales Research & Technology, 1 Av. A. Fresnel, Campus de l’Ecole Polytechnique)

  • N. D. Mathur

    (University of Cambridge)

  • A. Barthélémy

    (Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l’Ecole Polytechnique, 91767 Palaiseau, France, and Université Paris-Sud)

  • M. Bibes

    (Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l’Ecole Polytechnique, 91767 Palaiseau, France, and Université Paris-Sud)

Abstract

Volatile memories As alternative technologies for non-volatile memories are looked at, the FeRAM (ferroelectric random access memory), which stores information on a ferroelectric layer, is a promising candidate. FeRAMs outperform most other non-volatile memory technologies in terms of power consumption and endurance, but current FeRAMs are limited by their destructive read operation and poor scalability (due to the capacitive readout). Garcia et al. show that by using a thin (1–3 nm) layer of BaTiO3 put under intense strain, a giant electroresistance can still be detected, even in such thin specimens. This makes it possible to detect a tunnelling current through the layer, and so to read out the polarization state of the material without destroying it in the process. The physical size of the bits can be scaled down to dimensions that would make high densities — around 25 Gb per square inch — achievable for these devices.

Suggested Citation

  • V. Garcia & S. Fusil & K. Bouzehouane & S. Enouz-Vedrenne & N. D. Mathur & A. Barthélémy & M. Bibes, 2009. "Giant tunnel electroresistance for non-destructive readout of ferroelectric states," Nature, Nature, vol. 460(7251), pages 81-84, July.
    • Handle: RePEc:nat:nature:v:460:y:2009:i:7251:d:10.1038_nature08128
    DOI: 10.1038/nature08128
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    Cited by:

    1. Ralph El Hage & Vincent Humbert & Victor Rouco & Gabriel Sánchez-Santolino & Aurelien Lagarrigue & Kevin Seurre & Santiago J. Carreira & Anke Sander & Jérôme Charliac & Salvatore Mesoraca & Juan Trast, 2023. "Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Yueyang Jia & Qianqian Yang & Yue-Wen Fang & Yue Lu & Maosong Xie & Jianyong Wei & Jianjun Tian & Linxing Zhang & Rui Yang, 2024. "Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    3. Hui Bai & Jinsong Wu & Xianli Su & Haoyang Peng & Zhi Li & Dongwang Yang & Qingjie Zhang & Ctirad Uher & Xinfeng Tang, 2021. "Electroresistance in multipolar antiferroelectric Cu2Se semiconductor," Nature Communications, Nature, vol. 12(1), pages 1-6, December.
    4. Martin F. Sarott & Marta D. Rossell & Manfred Fiebig & Morgan Trassin, 2022. "Multilevel polarization switching in ferroelectric thin films," Nature Communications, Nature, vol. 13(1), pages 1-7, December.

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