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Two-dimensional ferroelectricity in a single-element bismuth monolayer

Author

Listed:
  • Jian Gou

    (National University of Singapore)

  • Hua Bai

    (Zhejiang University
    Kunming University of Science and Technology)

  • Xuanlin Zhang

    (Zhejiang University)

  • Yu Li Huang

    (Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University)

  • Sisheng Duan

    (National University of Singapore)

  • A. Ariando

    (National University of Singapore)

  • Shengyuan A. Yang

    (Singapore University of Technology and Design)

  • Lan Chen

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yunhao Lu

    (Zhejiang University)

  • Andrew Thye Shen Wee

    (National University of Singapore
    National University of Singapore)

Abstract

Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversion-symmetry breaking. However, in all of the conventional ferroelectric compounds, at least two constituent ions are required to support the polarization switching1,2. Here, we report the observation of a single-element ferroelectric state in a black phosphorus-like bismuth layer3, in which the ordered charge transfer and the regular atom distortion between sublattices happen simultaneously. Instead of a homogenous orbital configuration that ordinarily occurs in elementary substances, we found the Bi atoms in a black phosphorous-like Bi monolayer maintain a weak and anisotropic sp orbital hybridization, giving rise to the inversion-symmetry-broken buckled structure accompanied with charge redistribution in the unit cell. As a result, the in-plane electric polarization emerges in the Bi monolayer. Using the in-plane electric field produced by scanning probe microscopy, ferroelectric switching is further visualized experimentally. Owing to the conjugative locking between the charge transfer and atom displacement, we also observe the anomalous electric potential profile at the 180° tail-to-tail domain wall induced by competition between the electronic structure and electric polarization. This emergent single-element ferroelectricity broadens the mechanism of ferroelectrics and may enrich the applications of ferroelectronics in the future.

Suggested Citation

  • Jian Gou & Hua Bai & Xuanlin Zhang & Yu Li Huang & Sisheng Duan & A. Ariando & Shengyuan A. Yang & Lan Chen & Yunhao Lu & Andrew Thye Shen Wee, 2023. "Two-dimensional ferroelectricity in a single-element bismuth monolayer," Nature, Nature, vol. 617(7959), pages 67-72, May.
  • Handle: RePEc:nat:nature:v:617:y:2023:i:7959:d:10.1038_s41586-023-05848-5
    DOI: 10.1038/s41586-023-05848-5
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    Cited by:

    1. Qifeng Hu & Yuqiang Huang & Yang Wang & Sujuan Ding & Minjie Zhang & Chenqiang Hua & Linjun Li & Xiangfan Xu & Jinbo Yang & Shengjun Yuan & Kenji Watanabe & Takashi Taniguchi & Yunhao Lu & Chuanhong J, 2024. "Ferrielectricity controlled widely-tunable magnetoelectric coupling in van der Waals multiferroics," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    2. Luying Song & Ying Zhao & Bingqian Xu & Ruofan Du & Hui Li & Wang Feng & Junbo Yang & Xiaohui Li & Zijia Liu & Xia Wen & Yanan Peng & Yuzhu Wang & Hang Sun & Ling Huang & Yulin Jiang & Yao Cai & Xue J, 2024. "Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    3. Fan Zhang & Zhe Wang & Lixuan Liu & Anmin Nie & Yanxing Li & Yongji Gong & Wenguang Zhu & Chenggang Tao, 2024. "Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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