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Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3

Author

Listed:
  • Fan Zhang

    (Department of Physics, Virginia Tech
    University of Texas at Austin)

  • Zhe Wang

    (University of Science and Technology of China
    University of Science and Technology of China
    Southern University of Science and Technology)

  • Lixuan Liu

    (Beihang University
    Yanshan University)

  • Anmin Nie

    (Yanshan University)

  • Yanxing Li

    (University of Texas at Austin)

  • Yongji Gong

    (Beihang University)

  • Wenguang Zhu

    (University of Science and Technology of China
    University of Science and Technology of China)

  • Chenggang Tao

    (Department of Physics, Virginia Tech
    Oak Ridge National Laboratory)

Abstract

Domain boundaries have been intensively investigated in bulk ferroelectric materials and two-dimensional materials. Many methods such as electrical, mechanical and optical approaches have been utilized to probe and manipulate domain boundaries. So far most research focuses on the initial and final states of domain boundaries before and after manipulation, while the microscopic understanding of the evolution of domain boundaries remains elusive. In this paper, we report controllable manipulation of the domain boundaries in two-dimensional ferroelectric In2Se3 with atomic precision using scanning tunneling microscopy. We show that the movements of the domain boundaries can be driven by the electric field from a scanning tunneling microscope tip and proceed by the collective shifting of atoms at the domain boundaries. Our density functional theory calculations reveal the energy path and evolution of the domain boundary movement. The results provide deep insight into domain boundaries in two-dimensional ferroelectric materials and will inspire inventive applications of these materials.

Suggested Citation

  • Fan Zhang & Zhe Wang & Lixuan Liu & Anmin Nie & Yanxing Li & Yongji Gong & Wenguang Zhu & Chenggang Tao, 2024. "Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-023-44642-9
    DOI: 10.1038/s41467-023-44642-9
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    References listed on IDEAS

    as
    1. Fernando Rubio-Marcos & Adolfo Del Campo & Pascal Marchet & Jose F. Fernández, 2015. "Ferroelectric domain wall motion induced by polarized light," Nature Communications, Nature, vol. 6(1), pages 1-9, May.
    2. Jian Gou & Hua Bai & Xuanlin Zhang & Yu Li Huang & Sisheng Duan & A. Ariando & Shengyuan A. Yang & Lan Chen & Yunhao Lu & Andrew Thye Shen Wee, 2023. "Two-dimensional ferroelectricity in a single-element bismuth monolayer," Nature, Nature, vol. 617(7959), pages 67-72, May.
    3. S. Matzen & O. Nesterov & G. Rispens & J. A. Heuver & M. Biegalski & H. M. Christen & B. Noheda, 2014. "Super switching and control of in-plane ferroelectric nanodomains in strained thin films," Nature Communications, Nature, vol. 5(1), pages 1-8, December.
    4. Zongquan Gu & Shishir Pandya & Atanu Samanta & Shi Liu & Geoffrey Xiao & Cedric J. G. Meyers & Anoop R. Damodaran & Haim Barak & Arvind Dasgupta & Sahar Saremi & Alessia Polemi & Liyan Wu & Adrian A. , 2018. "Resonant domain-wall-enhanced tunable microwave ferroelectrics," Nature, Nature, vol. 560(7720), pages 622-627, August.
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