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Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Author

Listed:
  • Yahong Chai

    (Tsinghua University)

  • Yuhan Liang

    (Tsinghua University
    Tsinghua University)

  • Cancheng Xiao

    (Tsinghua University)

  • Yue Wang

    (Tsinghua University)

  • Bo Li

    (Tsinghua University)

  • Dingsong Jiang

    (Tsinghua University)

  • Pratap Pal

    (University of Wisconsin-Madison)

  • Yongjian Tang

    (Cornell University)

  • Hetian Chen

    (Tsinghua University)

  • Yuejie Zhang

    (Tsinghua University)

  • Hao Bai

    (Tsinghua University)

  • Teng Xu

    (Tsinghua University)

  • Wanjun Jiang

    (Tsinghua University)

  • Witold Skowroński

    (AGH University of Science and Technology)

  • Qinghua Zhang

    (Chinese Academy of Sciences)

  • Lin Gu

    (Tsinghua University)

  • Jing Ma

    (Tsinghua University)

  • Pu Yu

    (Tsinghua University)

  • Jianshi Tang

    (Tsinghua University)

  • Yuan-Hua Lin

    (Tsinghua University)

  • Di Yi

    (Tsinghua University)

  • Daniel C. Ralph

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

  • Chang-Beom Eom

    (University of Wisconsin-Madison)

  • Huaqiang Wu

    (Tsinghua University)

  • Tianxiang Nan

    (Tsinghua University)

Abstract

Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables—ferroelectric polarization and magnetization—we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

Suggested Citation

  • Yahong Chai & Yuhan Liang & Cancheng Xiao & Yue Wang & Bo Li & Dingsong Jiang & Pratap Pal & Yongjian Tang & Hetian Chen & Yuejie Zhang & Hao Bai & Teng Xu & Wanjun Jiang & Witold Skowroński & Qinghua, 2024. "Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-50372-3
    DOI: 10.1038/s41467-024-50372-3
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