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Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Author

Listed:
  • Fen Xue

    (Stanford University)

  • Shy-Jay Lin

    (Taiwan Semiconductor Manufacturing Company)

  • Mingyuan Song

    (Taiwan Semiconductor Manufacturing Company)

  • William Hwang

    (Stanford University)

  • Christoph Klewe

    (Advanced Light Source, Lawrence Berkeley National Laboratory)

  • Chien-Min Lee

    (Taiwan Semiconductor Manufacturing Company)

  • Emrah Turgut

    (Taiwan Semiconductor Manufacturing Company)

  • Padraic Shafer

    (Advanced Light Source, Lawrence Berkeley National Laboratory)

  • Arturas Vailionis

    (Stanford University
    Kaunas University of Technology)

  • Yen-Lin Huang

    (Taiwan Semiconductor Manufacturing Company)

  • Wilman Tsai

    (Stanford University)

  • Xinyu Bao

    (Taiwan Semiconductor Manufacturing Company)

  • Shan X. Wang

    (Stanford University
    Stanford University)

Abstract

Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co]N, which are either highly textured on single crystalline MgO substrates or randomly textured on SiO2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.

Suggested Citation

  • Fen Xue & Shy-Jay Lin & Mingyuan Song & William Hwang & Christoph Klewe & Chien-Min Lee & Emrah Turgut & Padraic Shafer & Arturas Vailionis & Yen-Lin Huang & Wilman Tsai & Xinyu Bao & Shan X. Wang, 2023. "Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-39649-1
    DOI: 10.1038/s41467-023-39649-1
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